SI3443DDV-T1-BE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: P-CHANNEL 20-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 4A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 10 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.12 EUR |
| 6000+ | 0.11 EUR |
| 9000+ | 0.1 EUR |
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Technische Details SI3443DDV-T1-BE3 Vishay Siliconix
Description: P-CHANNEL 20-V (D-S) MOSFET, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 4A (Tc), Rds On (Max) @ Id, Vgs: 47mOhm @ 4.7A, 4.5V, Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: 6-TSOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 10 V.
Weitere Produktangebote SI3443DDV-T1-BE3 nach Preis ab 0.063 EUR bis 0.6 EUR
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SI3443DDV-T1-BE3 | Hersteller : Vishay |
P-Channel MOSFET |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI3443DDV-T1-BE3 | Hersteller : Vishay |
P-Channel MOSFET |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI3443DDV-T1-BE3 | Hersteller : Vishay / Siliconix |
MOSFETs TSOP P CHAN 20V |
auf Bestellung 92795 Stücke: Lieferzeit 10-14 Tag (e) |
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SI3443DDV-T1-BE3 | Hersteller : Vishay Siliconix |
Description: P-CHANNEL 20-V (D-S) MOSFET Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 4A (Tc) Rds On (Max) @ Id, Vgs: 47mOhm @ 4.7A, 4.5V Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 10 V |
auf Bestellung 11944 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI3443DDV-T1-BE3 | Hersteller : Vishay |
P-Channel MOSFET |
Produkt ist nicht verfügbar |
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| SI3443DDV-T1-BE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -4A; Idm: -20A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -4A Pulsed drain current: -20A Power dissipation: 2.7W Case: TSOP6 Gate-source voltage: ±12V On-state resistance: 90mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI3443DDV-T1-BE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -4A; Idm: -20A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -4A Pulsed drain current: -20A Power dissipation: 2.7W Case: TSOP6 Gate-source voltage: ±12V On-state resistance: 90mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |