| Anzahl | Preis |
|---|---|
| 4+ | 0.83 EUR |
| 10+ | 0.51 EUR |
| 100+ | 0.33 EUR |
| 500+ | 0.25 EUR |
| 1000+ | 0.22 EUR |
| 3000+ | 0.18 EUR |
| 6000+ | 0.17 EUR |
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Technische Details SI3453DV-T1-GE3 Vishay / Siliconix
Description: MOSFET P-CHANNEL 30V 3.4A 6TSOP, Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 6-TSOP, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 3W (Tc), Rds On (Max) @ Id, Vgs: 165mOhm @ 2.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR).
Weitere Produktangebote SI3453DV-T1-GE3 nach Preis ab 0.22 EUR bis 0.69 EUR
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| SI3453DV-T1-GE3 | Vishay Siliconix |
 Description: MOSFET P-CHANNEL 30V 3.4A 6TSOPInput Capacitance (Ciss) (Max) @ Vds: 155 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 6-TSOP Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 3W (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) |
auf Bestellung 1935 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SI3453DV-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CHANNEL 30V 3.4A 6TSOP
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3W (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Description: MOSFET P-CHANNEL 30V 3.4A 6TSOP
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3W (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 1935 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 26+ | 0.69 EUR |
| 34+ | 0.53 EUR |
| 100+ | 0.28 EUR |
| 500+ | 0.25 EUR |
| 1000+ | 0.22 EUR |