SI3456DDV-T1-BE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: N-CHANNEL 30-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 6.3A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V
Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 15 V
auf Bestellung 4397 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 29+ | 0.62 EUR |
| 38+ | 0.48 EUR |
| 100+ | 0.28 EUR |
| 500+ | 0.26 EUR |
| 1000+ | 0.18 EUR |
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Technische Details SI3456DDV-T1-BE3 Vishay Siliconix
Description: N-CHANNEL 30-V (D-S) MOSFET, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 6.3A (Tc), Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V, Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 6-TSOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 15 V.
Weitere Produktangebote SI3456DDV-T1-BE3 nach Preis ab 0.15 EUR bis 0.69 EUR
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SI3456DDV-T1-BE3 | Hersteller : Vishay / Siliconix |
MOSFETs TSOP N CHAN 30V |
auf Bestellung 54756 Stücke: Lieferzeit 10-14 Tag (e) |
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SI3456DDV-T1-BE3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 5A 6-Pin TSOP T/R |
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| SI3456DDV-T1-BE3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 5A 6-Pin TSOP T/R |
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SI3456DDV-T1-BE3 | Hersteller : Vishay Siliconix |
Description: N-CHANNEL 30-V (D-S) MOSFET Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 6.3A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 15 V |
Produkt ist nicht verfügbar |