Weitere Produktangebote SI3456DDV-T1-E3 nach Preis ab 0.15 EUR bis 0.88 EUR
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SI3456DDV-T1-E3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 30V 6.3A 6TSOPPackaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 15 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI3456DDV-T1-E3 | Hersteller : Vishay Semiconductors |
MOSFET 30V Vds 20V Vgs TSOP-6 |
auf Bestellung 5168 Stücke: Lieferzeit 10-14 Tag (e) |
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SI3456DDV-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 6.3A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 15 V |
auf Bestellung 8228 Stücke: Lieferzeit 10-14 Tag (e) |
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auf Bestellung 33000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI3456DDV-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 5A 6-Pin TSOP T/R |
Produkt ist nicht verfügbar |
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| SI3456DDV-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 6.3A; Idm: 20A Kind of package: reel; tape Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Technology: TrenchFET® Case: TSOP6 Gate charge: 9nC On-state resistance: 50mΩ Power dissipation: 2.7W Drain current: 6.3A Pulsed drain current: 20A Gate-source voltage: ±20V Drain-source voltage: 30V Polarisation: unipolar |
Produkt ist nicht verfügbar |