SI3457CDV-T1-BE3
Produktcode: 189371
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Transistoren > Transistoren P-Kanal-Feld
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Weitere Produktangebote SI3457CDV-T1-BE3 nach Preis ab 0.27 EUR bis 1.09 EUR
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SI3457CDV-T1-BE3 | Hersteller : Vishay Siliconix |
Description: P-CHANNEL 30-V (D-S) MOSFETPackaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 5.1A (Tc) Rds On (Max) @ Id, Vgs: 74mOhm @ 4.1A, 10V Power Dissipation (Max): 2W (Ta), 3W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 15 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI3457CDV-T1-BE3 | Hersteller : Vishay Siliconix |
Description: P-CHANNEL 30-V (D-S) MOSFETPackaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 5.1A (Tc) Rds On (Max) @ Id, Vgs: 74mOhm @ 4.1A, 10V Power Dissipation (Max): 2W (Ta), 3W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 15 V |
auf Bestellung 5746 Stücke: Lieferzeit 10-14 Tag (e) |
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SI3457CDV-T1-BE3 | Hersteller : Vishay / Siliconix |
MOSFETs TSOP6 P-CH 30V 4.1A |
auf Bestellung 8491 Stücke: Lieferzeit 10-14 Tag (e) |
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SI3457CDV-T1-BE3 | Hersteller : Vishay |
Trans MOSFET P-CH 30V 4.1A 6-Pin TSOP T/R |
Produkt ist nicht verfügbar |


