Produkte > VISHAY SILICONIX > SI3457CDV-T1-BE3
SI3457CDV-T1-BE3

SI3457CDV-T1-BE3 Vishay Siliconix

si3457cdv.pdf Hersteller: Vishay Siliconix
Description: P-CHANNEL 30-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 5.1A (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 4.1A, 10V
Power Dissipation (Max): 2W (Ta), 3W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.28 EUR
Mindestbestellmenge: 3000
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Technische Details SI3457CDV-T1-BE3 Vishay Siliconix

Description: P-CHANNEL 30-V (D-S) MOSFET, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 5.1A (Tc), Rds On (Max) @ Id, Vgs: 74mOhm @ 4.1A, 10V, Power Dissipation (Max): 2W (Ta), 3W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 6-TSOP, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 15 V.

Weitere Produktangebote SI3457CDV-T1-BE3 nach Preis ab 0.31 EUR bis 1.02 EUR

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Preis ohne MwSt
SI3457CDV-T1-BE3 SI3457CDV-T1-BE3 Hersteller : Vishay Siliconix si3457cdv.pdf Description: P-CHANNEL 30-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 5.1A (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 4.1A, 10V
Power Dissipation (Max): 2W (Ta), 3W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 15 V
auf Bestellung 5746 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
21+0.84 EUR
25+ 0.72 EUR
100+ 0.5 EUR
500+ 0.39 EUR
1000+ 0.32 EUR
Mindestbestellmenge: 21
SI3457CDV-T1-BE3 SI3457CDV-T1-BE3 Hersteller : Vishay / Siliconix si3457cdv.pdf MOSFET P-CHANNEL 30-V (D-S)
auf Bestellung 8583 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+1.02 EUR
10+ 0.87 EUR
100+ 0.65 EUR
500+ 0.51 EUR
1000+ 0.39 EUR
3000+ 0.32 EUR
9000+ 0.31 EUR
Mindestbestellmenge: 3
SI3457CDV-T1-BE3
Produktcode: 189371 		si3457cdv.pdf Transistoren > Transistoren P-Kanal-Feld
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SI3457CDV-T1-BE3 SI3457CDV-T1-BE3 Hersteller : Vishay si3457cdv.pdf Trans MOSFET P-CH 30V 4.1A 6-Pin TSOP T/R
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