SI3457CDV-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 5.1A 6TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2W (Ta), 3W (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 4.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.35 EUR |
| 9000+ | 0.33 EUR |
| 21000+ | 0.32 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI3457CDV-T1-GE3 Vishay Siliconix
Description: VISHAY - SI3457CDV-T1-GE3 - Leistungs-MOSFET, p-Kanal, 30 V, 5.1 A, 0.074 ohm, TSOP, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, euEccn: NLR, Drain-Source-Spannung Vds: 30V, rohsCompliant: YES, Dauer-Drainstrom Id: 5.1A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: N, MSL: -, Gate-Source-Schwellenspannung, max.: 1V, Verlustleistung: 3W, SVHC: No SVHC (04-Feb-2026), Bauform - Transistor: TSOP, Anzahl der Pins: 6Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: p-Kanal, Betriebstemperatur, max.: 150°C, Rds(on)-Prüfspannung: 10V, Drain-Source-Durchgangswiderstand: 0.074ohm.
Weitere Produktangebote SI3457CDV-T1-GE3 nach Preis ab 0.35 EUR bis 1.4 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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SI3457CDV-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -4.1A; Idm: -20A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -4.1A Pulsed drain current: -20A Power dissipation: 3W Case: SC74; TSOP6 Gate-source voltage: ±20V On-state resistance: 113mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 939 Stücke: Lieferzeit 14-21 Tag (e) |
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SI3457CDV-T1-GE3 | Vishay Semiconductors |
MOSFETs -30V Vds 20V Vgs TSOP-6 |
auf Bestellung 6832 Stücke: Lieferzeit 10-14 Tag (e) |
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SI3457CDV-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 30V 5.1A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc) Rds On (Max) @ Id, Vgs: 74mOhm @ 4.1A, 10V Power Dissipation (Max): 2W (Ta), 3W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 15 V |
auf Bestellung 21133 Stücke: Lieferzeit 10-14 Tag (e) |
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SI3457CDV-T1-GE3 | VISHAY |
Description: VISHAY - SI3457CDV-T1-GE3 - Leistungs-MOSFET, p-Kanal, 30 V, 5.1 A, 0.074 ohm, TSOP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 5.1A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N MSL: - Gate-Source-Schwellenspannung, max.: 1V Verlustleistung: 3W SVHC: No SVHC (04-Feb-2026) Bauform - Transistor: TSOP Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: p-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.074ohm |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| SI3457CDV-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -4.1A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.1A
Pulsed drain current: -20A
Power dissipation: 3W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 113mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -4.1A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.1A
Pulsed drain current: -20A
Power dissipation: 3W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 113mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 939 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 77+ | 1.11 EUR |
| 106+ | 0.81 EUR |
| 152+ | 0.56 EUR |
| 177+ | 0.48 EUR |
| 500+ | 0.35 EUR |
| SI3457CDV-T1-GE3 |
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Hersteller: Vishay Semiconductors
MOSFETs -30V Vds 20V Vgs TSOP-6
MOSFETs -30V Vds 20V Vgs TSOP-6
auf Bestellung 6832 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.37 EUR |
| 10+ | 0.96 EUR |
| 100+ | 0.67 EUR |
| 500+ | 0.51 EUR |
| 1000+ | 0.46 EUR |
| 3000+ | 0.36 EUR |
| 6000+ | 0.35 EUR |
| SI3457CDV-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 5.1A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 4.1A, 10V
Power Dissipation (Max): 2W (Ta), 3W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 15 V
Description: MOSFET P-CH 30V 5.1A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 4.1A, 10V
Power Dissipation (Max): 2W (Ta), 3W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 15 V
auf Bestellung 21133 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15+ | 1.4 EUR |
| 23+ | 0.94 EUR |
| 100+ | 0.65 EUR |
| 500+ | 0.51 EUR |
| 1000+ | 0.46 EUR |
| SI3457CDV-T1-GE3 |
|
Hersteller: VISHAY
Description: VISHAY - SI3457CDV-T1-GE3 - Leistungs-MOSFET, p-Kanal, 30 V, 5.1 A, 0.074 ohm, TSOP, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 5.1A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
MSL: -
Gate-Source-Schwellenspannung, max.: 1V
Verlustleistung: 3W
SVHC: No SVHC (04-Feb-2026)
Bauform - Transistor: TSOP
Anzahl der Pins: 6Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: p-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.074ohm
Description: VISHAY - SI3457CDV-T1-GE3 - Leistungs-MOSFET, p-Kanal, 30 V, 5.1 A, 0.074 ohm, TSOP, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 5.1A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
MSL: -
Gate-Source-Schwellenspannung, max.: 1V
Verlustleistung: 3W
SVHC: No SVHC (04-Feb-2026)
Bauform - Transistor: TSOP
Anzahl der Pins: 6Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: p-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.074ohm
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)