SI3457DV ON Semiconductor / Fairchild
auf Bestellung 4181 Stücke:
Lieferzeit 14-28 Tag (e)
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Technische Details SI3457DV ON Semiconductor / Fairchild
Description: MOSFET P-CH 30V 4A SUPERSOT6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V, Power Dissipation (Max): 1.6W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SuperSOT™-6, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V.
Weitere Produktangebote SI3457DV
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| SI3457DV | Hersteller : VISHAY |
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auf Bestellung 15746 Stücke: Lieferzeit 21-28 Tag (e) |
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| SI3457DV | Hersteller : VISHAY |
2004 |
auf Bestellung 72 Stücke: Lieferzeit 21-28 Tag (e) |
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| SI3457DV | Hersteller : VISHAY |
SOT-163 |
auf Bestellung 2800 Stücke: Lieferzeit 21-28 Tag (e) |
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SI3457DV | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 30V 4A 6-Pin TSOT-23 T/R |
Produkt ist nicht verfügbar |
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SI3457DV | Hersteller : onsemi |
Description: MOSFET P-CH 30V 4A SUPERSOT6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SuperSOT™-6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V |
Produkt ist nicht verfügbar |
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SI3457DV | Hersteller : onsemi |
Description: MOSFET P-CH 30V 4A SUPERSOT6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SuperSOT™-6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V |
Produkt ist nicht verfügbar |