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SI3458DV-T1-E3


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Technische Details SI3458DV-T1-E3

Description: MOSFET N-CH 60V 3.2A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), Rds On (Max) @ Id, Vgs: 100mOhm @ 3.2A, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA (Min), Supplier Device Package: 6-TSOP, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V.

Weitere Produktangebote SI3458DV-T1-E3

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SI3458DV-T1-E3 SI3458DV-T1-E3
Produktcode: 43902
Verschiedene Bauteile > Verschiedene Bauteile 2
Produkt ist nicht verfügbar
SI3458DV-T1-E3 SI3458DV-T1-E3 Hersteller : Vishay Siliconix Description: MOSFET N-CH 60V 3.2A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.2A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Produkt ist nicht verfügbar
SI3458DV-T1-E3 SI3458DV-T1-E3 Hersteller : Vishay Siliconix Description: MOSFET N-CH 60V 3.2A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.2A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Produkt ist nicht verfügbar