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SI3459BDV-T1-BE3

SI3459BDV-T1-BE3 Vishay / Siliconix

si3459bd.pdf Hersteller: Vishay / Siliconix
MOSFETs TSOP P CHAN 60V
auf Bestellung 124025 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.57 EUR
10+1.17 EUR
100+0.80 EUR
500+0.65 EUR
1000+0.57 EUR
3000+0.49 EUR
Mindestbestellmenge: 2
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Technische Details SI3459BDV-T1-BE3 Vishay / Siliconix

Description: P-CHANNEL 60-V (D-S) MOSFET, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta), 2.9A (Tc), Rds On (Max) @ Id, Vgs: 216mOhm @ 2.2A, 10V, Power Dissipation (Max): 2W (Ta), 3.3W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 6-TSOP, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 30 V.

Weitere Produktangebote SI3459BDV-T1-BE3 nach Preis ab 0.60 EUR bis 2.04 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
SI3459BDV-T1-BE3 SI3459BDV-T1-BE3 Hersteller : Vishay Siliconix si3459bd.pdf Description: P-CHANNEL 60-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta), 2.9A (Tc)
Rds On (Max) @ Id, Vgs: 216mOhm @ 2.2A, 10V
Power Dissipation (Max): 2W (Ta), 3.3W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 30 V
auf Bestellung 1370 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.04 EUR
14+1.28 EUR
100+0.84 EUR
500+0.66 EUR
1000+0.60 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
SI3459BDV-T1-BE3 SI3459BDV-T1-BE3 Hersteller : Vishay si3459bd.pdf Trans MOSFET P-CH 60V 2.2A 6-Pin TSOP T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI3459BDV-T1-BE3 SI3459BDV-T1-BE3 Hersteller : Vishay Siliconix si3459bd.pdf Description: P-CHANNEL 60-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta), 2.9A (Tc)
Rds On (Max) @ Id, Vgs: 216mOhm @ 2.2A, 10V
Power Dissipation (Max): 2W (Ta), 3.3W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH