| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.18 EUR |
| 10+ | 1.37 EUR |
| 100+ | 0.9 EUR |
| 500+ | 0.7 EUR |
| 1000+ | 0.58 EUR |
| 3000+ | 0.5 EUR |
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Technische Details SI3459BDV-T1-BE3 Vishay / Siliconix
Description: P-CHANNEL 60-V (D-S) MOSFET, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta), 2.9A (Tc), Rds On (Max) @ Id, Vgs: 216mOhm @ 2.2A, 10V, Power Dissipation (Max): 2W (Ta), 3.3W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 6-TSOP, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 30 V.
Weitere Produktangebote SI3459BDV-T1-BE3 nach Preis ab 0.71 EUR bis 2.43 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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SI3459BDV-T1-BE3 | Vishay Siliconix |
 Description: P-CHANNEL 60-V (D-S) MOSFETPackaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta), 2.9A (Tc) Rds On (Max) @ Id, Vgs: 216mOhm @ 2.2A, 10V Power Dissipation (Max): 2W (Ta), 3.3W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 30 V |
auf Bestellung 1370 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SI3459BDV-T1-BE3 |
|
Hersteller: Vishay Siliconix
Description: P-CHANNEL 60-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta), 2.9A (Tc)
Rds On (Max) @ Id, Vgs: 216mOhm @ 2.2A, 10V
Power Dissipation (Max): 2W (Ta), 3.3W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 30 V
Description: P-CHANNEL 60-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta), 2.9A (Tc)
Rds On (Max) @ Id, Vgs: 216mOhm @ 2.2A, 10V
Power Dissipation (Max): 2W (Ta), 3.3W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 30 V
auf Bestellung 1370 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.43 EUR |
| 14+ | 1.52 EUR |
| 100+ | 1 EUR |
| 500+ | 0.79 EUR |
| 1000+ | 0.71 EUR |