SI3469DV-T1-E3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET P-CH 20V 5A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 6.7A, 10V
Power Dissipation (Max): 1.14W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.42 EUR |
| 6000+ | 0.38 EUR |
| 9000+ | 0.37 EUR |
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Technische Details SI3469DV-T1-E3 Vishay Siliconix
Description: MOSFET P-CH 20V 5A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), Rds On (Max) @ Id, Vgs: 30mOhm @ 6.7A, 10V, Power Dissipation (Max): 1.14W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 6-TSOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V.
Weitere Produktangebote SI3469DV-T1-E3 nach Preis ab 0.48 EUR bis 1.69 EUR
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SI3469DV-T1-E3 | Hersteller : Vishay Semiconductors |
MOSFET 20V 6.7A 0.03Ohm |
auf Bestellung 22758 Stücke: Lieferzeit 10-14 Tag (e) |
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SI3469DV-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 20V 5A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 6.7A, 10V Power Dissipation (Max): 1.14W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V |
auf Bestellung 11069 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI3469DV-T1-E3 | Hersteller : VISHAY |
07+ TSSOP |
auf Bestellung 200 Stücke: Lieferzeit 21-28 Tag (e) |
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| SI3469DV-T1-E3 | Hersteller : VISHAY |
09+ |
auf Bestellung 126018 Stücke: Lieferzeit 21-28 Tag (e) |
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SI3469DV-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 20V 5A 6-Pin TSOP T/R |
Produkt ist nicht verfügbar |
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| SI3469DV-T1-E3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6.7A; Idm: -25A Case: TSOP6 Drain-source voltage: -20V Drain current: -6.7A On-state resistance: 51mΩ Type of transistor: P-MOSFET Power dissipation: 2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 30nC Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -25A Mounting: SMD Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI3469DV-T1-E3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6.7A; Idm: -25A Case: TSOP6 Drain-source voltage: -20V Drain current: -6.7A On-state resistance: 51mΩ Type of transistor: P-MOSFET Power dissipation: 2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 30nC Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -25A Mounting: SMD |
Produkt ist nicht verfügbar |