auf Bestellung 101553 Stücke:
Lieferzeit 787-791 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
4+ | 0.74 EUR |
10+ | 0.64 EUR |
100+ | 0.48 EUR |
500+ | 0.37 EUR |
1000+ | 0.29 EUR |
3000+ | 0.26 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI3474DV-T1-BE3 Vishay / Siliconix
Description: N-CHANNEL 100-V (D-S) MOSFET, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), 3.8A (Tc), Rds On (Max) @ Id, Vgs: 126mOhm @ 2A, 10V, Power Dissipation (Max): 2W (Ta), 3.6W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 6-TSOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 50 V.
Weitere Produktangebote SI3474DV-T1-BE3
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
SI3474DV-T1-BE3 | Hersteller : Vishay | Trans MOSFET |
Produkt ist nicht verfügbar |
||
SI3474DV-T1-BE3 | Hersteller : Vishay Siliconix |
Description: N-CHANNEL 100-V (D-S) MOSFET Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), 3.8A (Tc) Rds On (Max) @ Id, Vgs: 126mOhm @ 2A, 10V Power Dissipation (Max): 2W (Ta), 3.6W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 50 V |
Produkt ist nicht verfügbar |
||
SI3474DV-T1-BE3 | Hersteller : Vishay Siliconix |
Description: N-CHANNEL 100-V (D-S) MOSFET Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), 3.8A (Tc) Rds On (Max) @ Id, Vgs: 126mOhm @ 2A, 10V Power Dissipation (Max): 2W (Ta), 3.6W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 50 V |
Produkt ist nicht verfügbar |