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Technische Details SI3474DV-T1-GE3 Vishay
Description: VISHAY - SI3474DV-T1-GE3 - Leistungs-MOSFET, n-Kanal, 100 V, 3.8 A, 0.102 ohm, TSOP, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, euEccn: NLR, Drain-Source-Spannung Vds: 100V, rohsCompliant: YES, Dauer-Drainstrom Id: 3.8A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, MSL: MSL 1 - unbegrenzt, Gate-Source-Schwellenspannung, max.: -, Verlustleistung: 3.6W, SVHC: No SVHC (04-Feb-2026), Bauform - Transistor: TSOP, Anzahl der Pins: 6Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n-Kanal, Betriebstemperatur, max.: 150°C, Rds(on)-Prüfspannung: 10V, Drain-Source-Durchgangswiderstand: 0.102ohm.
Weitere Produktangebote SI3474DV-T1-GE3 nach Preis ab 0.24 EUR bis 1.76 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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SI3474DV-T1-GE3 | Vishay |
 Trans MOSFET N-CH 100V 3.8A 6-Pin TSOP T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI3474DV-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 100V 3.8A 6TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 6-TSOP Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 3.6W (Tc) Rds On (Max) @ Id, Vgs: 126mOhm @ 2A, 10V Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI3474DV-T1-GE3 | Vishay / Siliconix |
MOSFETs 100V Vds 20V Vgs TSOP-6 |
auf Bestellung 652 Stücke: Lieferzeit 10-14 Tag (e) |
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SI3474DV-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 100V 3.8A 6TSOP Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 6-TSOP Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 3.6W (Tc) Rds On (Max) @ Id, Vgs: 126mOhm @ 2A, 10V Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) |
auf Bestellung 17085 Stücke: Lieferzeit 10-14 Tag (e) |
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SI3474DV-T1-GE3 | VISHAY |
Description: VISHAY - SI3474DV-T1-GE3 - Leistungs-MOSFET, n-Kanal, 100 V, 3.8 A, 0.102 ohm, TSOP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 3.8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: - Verlustleistung: 3.6W SVHC: No SVHC (04-Feb-2026) Bauform - Transistor: TSOP Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.102ohm |
auf Bestellung 5443 Stücke: Lieferzeit 14-21 Tag (e) |
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| SI3474DV-T1-GE3 |
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Hersteller: Vishay
Trans MOSFET N-CH 100V 3.8A 6-Pin TSOP T/R
Trans MOSFET N-CH 100V 3.8A 6-Pin TSOP T/R
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6000+ | 0.24 EUR |
| SI3474DV-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 3.8A 6TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.6W (Tc)
Rds On (Max) @ Id, Vgs: 126mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Description: MOSFET N-CH 100V 3.8A 6TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.6W (Tc)
Rds On (Max) @ Id, Vgs: 126mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.33 EUR |
| 9000+ | 0.29 EUR |
| SI3474DV-T1-GE3 |
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Hersteller: Vishay / Siliconix
MOSFETs 100V Vds 20V Vgs TSOP-6
MOSFETs 100V Vds 20V Vgs TSOP-6
auf Bestellung 652 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.33 EUR |
| 10+ | 0.82 EUR |
| 100+ | 0.54 EUR |
| 500+ | 0.4 EUR |
| 1000+ | 0.36 EUR |
| 3000+ | 0.31 EUR |
| 6000+ | 0.29 EUR |
| SI3474DV-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 3.8A 6TSOP
Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.6W (Tc)
Rds On (Max) @ Id, Vgs: 126mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 3.8A 6TSOP
Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.6W (Tc)
Rds On (Max) @ Id, Vgs: 126mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 17085 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15+ | 1.43 EUR |
| 24+ | 0.89 EUR |
| 50+ | 0.65 EUR |
| 100+ | 0.57 EUR |
| 500+ | 0.43 EUR |
| SI3474DV-T1-GE3 |
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Hersteller: VISHAY
Description: VISHAY - SI3474DV-T1-GE3 - Leistungs-MOSFET, n-Kanal, 100 V, 3.8 A, 0.102 ohm, TSOP, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 3.8A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: -
Verlustleistung: 3.6W
SVHC: No SVHC (04-Feb-2026)
Bauform - Transistor: TSOP
Anzahl der Pins: 6Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.102ohm
Description: VISHAY - SI3474DV-T1-GE3 - Leistungs-MOSFET, n-Kanal, 100 V, 3.8 A, 0.102 ohm, TSOP, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 3.8A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: -
Verlustleistung: 3.6W
SVHC: No SVHC (04-Feb-2026)
Bauform - Transistor: TSOP
Anzahl der Pins: 6Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.102ohm
auf Bestellung 5443 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 142+ | 1.76 EUR |
| 229+ | 1.01 EUR |
| 355+ | 0.61 EUR |
| 500+ | 0.46 EUR |
| 1000+ | 0.42 EUR |
| 5000+ | 0.35 EUR |