auf Bestellung 62028 Stücke:
Lieferzeit 951-965 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 48+ | 1.1 EUR |
| 56+ | 0.94 EUR |
| 100+ | 0.7 EUR |
| 500+ | 0.55 EUR |
| 1000+ | 0.43 EUR |
| 3000+ | 0.41 EUR |
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Technische Details SI3474DV-T1-GE3 Vishay / Siliconix
Description: MOSFET N-CH 100V 3.8A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc), Rds On (Max) @ Id, Vgs: 126mOhm @ 2A, 10V, Power Dissipation (Max): 3.6W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 6-TSOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 50 V.
Weitere Produktangebote SI3474DV-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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SI3474DV-T1-GE3 | Hersteller : Vishay |
 Trans MOSFET N-CH 100V 3.8A 6-Pin TSOP T/R |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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SI3474DV-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 100V 3.8A 6-Pin TSOP T/R |
Produkt ist nicht verfügbar |
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SI3474DV-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 3.8A; Idm: 14A Power dissipation: 2.33W Mounting: SMD Kind of package: reel; tape Case: TSOP6 Drain-source voltage: 100V Drain current: 3.8A On-state resistance: 126mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 10.4nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 14A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SI3474DV-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 100V 3.8A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc) Rds On (Max) @ Id, Vgs: 126mOhm @ 2A, 10V Power Dissipation (Max): 3.6W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 50 V |
Produkt ist nicht verfügbar |
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SI3474DV-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 100V 3.8A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc) Rds On (Max) @ Id, Vgs: 126mOhm @ 2A, 10V Power Dissipation (Max): 3.6W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 50 V |
Produkt ist nicht verfügbar |
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SI3474DV-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 3.8A; Idm: 14A Power dissipation: 2.33W Mounting: SMD Kind of package: reel; tape Case: TSOP6 Drain-source voltage: 100V Drain current: 3.8A On-state resistance: 126mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 10.4nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 14A |
Produkt ist nicht verfügbar |