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Technische Details SI3476DV-T1-BE3 Vishay
Description: N-CHANNEL 80-V (D-S) MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 6-TSOP, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 2W (Ta), 3.6W (Tc), Rds On (Max) @ Id, Vgs: 93mOhm @ 3.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 4.6A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR).
Weitere Produktangebote SI3476DV-T1-BE3 nach Preis ab 0.25 EUR bis 1.59 EUR
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SI3476DV-T1-BE3 | Vishay |
 Trans MOSFET N-CH 80V 4.6A 6-Pin TSOP T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI3476DV-T1-BE3 | Vishay / Siliconix |
MOSFETs TSOP6 N-CH 80V 3.5A |
auf Bestellung 8650 Stücke: Lieferzeit 10-14 Tag (e) |
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SI3476DV-T1-BE3 | Vishay Siliconix |
Description: N-CHANNEL 80-V (D-S) MOSFET Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 6-TSOP Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2W (Ta), 3.6W (Tc) Rds On (Max) @ Id, Vgs: 93mOhm @ 3.5A, 10V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 4.6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) |
auf Bestellung 2372 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI3476DV-T1-BE3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 80V 4.6A 6-Pin TSOP T/R
Trans MOSFET N-CH 80V 4.6A 6-Pin TSOP T/R
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.25 EUR |
| SI3476DV-T1-BE3 |
|
Hersteller: Vishay / Siliconix
MOSFETs TSOP6 N-CH 80V 3.5A
MOSFETs TSOP6 N-CH 80V 3.5A
auf Bestellung 8650 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.57 EUR |
| 10+ | 0.98 EUR |
| 100+ | 0.63 EUR |
| 500+ | 0.48 EUR |
| 1000+ | 0.43 EUR |
| 3000+ | 0.33 EUR |
| 6000+ | 0.31 EUR |
| SI3476DV-T1-BE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 80-V (D-S) MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2W (Ta), 3.6W (Tc)
Rds On (Max) @ Id, Vgs: 93mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 4.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Description: N-CHANNEL 80-V (D-S) MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2W (Ta), 3.6W (Tc)
Rds On (Max) @ Id, Vgs: 93mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 4.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 2372 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14+ | 1.59 EUR |
| 22+ | 0.99 EUR |
| 100+ | 0.64 EUR |
| 500+ | 0.49 EUR |
| 1000+ | 0.44 EUR |