SI3483DDV-T1-BE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: P-CHANNEL 30-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta), 8A (Tc)
Rds On (Max) @ Id, Vgs: 31.2mOhm @ 5A, 10V
Power Dissipation (Max): 2W (Ta), 3W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 15 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.29 EUR |
| 6000+ | 0.28 EUR |
| 9000+ | 0.26 EUR |
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Technische Details SI3483DDV-T1-BE3 Vishay Siliconix
Description: P-CHANNEL 30-V (D-S) MOSFET, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta), 8A (Tc), Rds On (Max) @ Id, Vgs: 31.2mOhm @ 5A, 10V, Power Dissipation (Max): 2W (Ta), 3W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 6-TSOP, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +16V, -20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 15 V.
Weitere Produktangebote SI3483DDV-T1-BE3 nach Preis ab 0.26 EUR bis 0.87 EUR
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SI3483DDV-T1-BE3 | Hersteller : Vishay Siliconix |
Description: P-CHANNEL 30-V (D-S) MOSFET Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta), 8A (Tc) Rds On (Max) @ Id, Vgs: 31.2mOhm @ 5A, 10V Power Dissipation (Max): 2W (Ta), 3W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +16V, -20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 15 V |
auf Bestellung 18405 Stücke: Lieferzeit 10-14 Tag (e) |
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SI3483DDV-T1-BE3 | Hersteller : Vishay / Siliconix |
MOSFET P-CHANNEL 30-V (D-S) |
auf Bestellung 105951 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI3483DDV-T1-BE3 | Hersteller : Vishay |
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| SI3483DDV-T1-BE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -8A; Idm: -30A; 3W Case: TSOP6 Mounting: SMD Kind of package: reel; tape Type of transistor: P-MOSFET On-state resistance: 51.3mΩ Power dissipation: 3W Polarisation: unipolar Drain current: -8A Drain-source voltage: -30V Gate charge: 14.5nC Technology: TrenchFET® Kind of channel: enhanced Pulsed drain current: -30A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI3483DDV-T1-BE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -8A; Idm: -30A; 3W Case: TSOP6 Mounting: SMD Kind of package: reel; tape Type of transistor: P-MOSFET On-state resistance: 51.3mΩ Power dissipation: 3W Polarisation: unipolar Drain current: -8A Drain-source voltage: -30V Gate charge: 14.5nC Technology: TrenchFET® Kind of channel: enhanced Pulsed drain current: -30A |
Produkt ist nicht verfügbar |