Produktrezensionen
Produktbewertung abgeben
Technische Details SI3493BDV-T1-GE3 Vishay
Description: MOSFET P-CH 20V 8A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7A, 4.5V, Power Dissipation (Max): 2.08W (Ta), 2.97W (Tc), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: 6-TSOP, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 43.5 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1805 pF @ 10 V.
Weitere Produktangebote SI3493BDV-T1-GE3 nach Preis ab 0.64 EUR bis 2.62 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SI3493BDV-T1-GE3 | Vishay |
Trans MOSFET P-CH 20V 8A 6-Pin TSOP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
|
SI3493BDV-T1-GE3 | Vishay |
Trans MOSFET P-CH 20V 8A 6-Pin TSOP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
|
SI3493BDV-T1-GE3 | Vishay Semiconductors |
MOSFETs 20V 8.0A 2.97W 27.5mohm @ 4.5V |
auf Bestellung 1559 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
SI3493BDV-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 20V 8A 6TSOPPackaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7A, 4.5V Power Dissipation (Max): 2.08W (Ta), 2.97W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 43.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1805 pF @ 10 V |
auf Bestellung 4317 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
| SI3493BDV-T1-GE3 |
|
auf Bestellung 33000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SI3493BDV-T1-GE3 |
![]() |
Hersteller: Vishay
Trans MOSFET P-CH 20V 8A 6-Pin TSOP T/R
Trans MOSFET P-CH 20V 8A 6-Pin TSOP T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.67 EUR |
| SI3493BDV-T1-GE3 |
![]() |
Hersteller: Vishay
Trans MOSFET P-CH 20V 8A 6-Pin TSOP T/R
Trans MOSFET P-CH 20V 8A 6-Pin TSOP T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.67 EUR |
| SI3493BDV-T1-GE3 |
![]() |
Hersteller: Vishay Semiconductors
MOSFETs 20V 8.0A 2.97W 27.5mohm @ 4.5V
MOSFETs 20V 8.0A 2.97W 27.5mohm @ 4.5V
auf Bestellung 1559 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.48 EUR |
| 10+ | 1.56 EUR |
| 100+ | 1.04 EUR |
| 500+ | 0.81 EUR |
| 1000+ | 0.74 EUR |
| 3000+ | 0.64 EUR |
| SI3493BDV-T1-GE3 |
![]() |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 8A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7A, 4.5V
Power Dissipation (Max): 2.08W (Ta), 2.97W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 43.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1805 pF @ 10 V
Description: MOSFET P-CH 20V 8A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7A, 4.5V
Power Dissipation (Max): 2.08W (Ta), 2.97W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 43.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1805 pF @ 10 V
auf Bestellung 4317 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.62 EUR |
| 13+ | 1.65 EUR |
| 100+ | 1.09 EUR |
| 500+ | 0.86 EUR |
| 1000+ | 0.77 EUR |
| SI3493BDV-T1-GE3 |
![]() |
auf Bestellung 33000 Stücke:
Lieferzeit 21-28 Tag (e)




