SI3585CDV-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 3.9A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W, 1.3W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.9A, 2.1A
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 10V
Rds On (Max) @ Id, Vgs: 58mOhm @ 2.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
| Anzahl | Preis |
|---|---|
| 3000+ | 0.31 EUR |
| 6000+ | 0.29 EUR |
| 9000+ | 0.27 EUR |
| 15000+ | 0.26 EUR |
| 21000+ | 0.25 EUR |
| 30000+ | 0.24 EUR |
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Technische Details SI3585CDV-T1-GE3 Vishay Siliconix
Description: VISHAY - SI3585CDV-T1-GE3 - Dual-MOSFET, Komplementärer n- und p-Kanal, 20 V, 20 V, 3.9 A, 3.9 A, 0.048 ohm, tariffCode: 85412900, euEccn: NLR, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 3.9A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: N, Drain-Source-Spannung Vds, p-Kanal: 20V, MSL: MSL 1 - unbegrenzt, Dauer-Drainstrom Id, n-Kanal: 3.9A, Drain-Source-Durchgangswiderstand, p-Kanal: 0.048ohm, Verlustleistung, p-Kanal: 1.4W, Drain-Source-Spannung Vds, n-Kanal: 20V, SVHC: No SVHC (04-Feb-2026), Bauform - Transistor: TSOP, Anzahl der Pins: 6Pin(s), Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 0.048ohm, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: Komplementärer n- und p-Kanal, Verlustleistung, n-Kanal: 1.4W, Betriebstemperatur, max.: 150°C.
Weitere Produktangebote SI3585CDV-T1-GE3 nach Preis ab 0.23 EUR bis 1.32 EUR
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SI3585CDV-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 20/-20V; 3.1/-1.7A Type of transistor: N/P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 3.1/-1.7A Power dissipation: 0.9/8W Case: SC74; TSOP6 Gate-source voltage: ±12V On-state resistance: 78/316mΩ Mounting: SMD Gate charge: 4.8/9nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 4180 Stücke: Lieferzeit 14-21 Tag (e) |
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SI3585CDV-T1-GE3 | Vishay Semiconductors |
MOSFETs -20V Vds 12V Vgs TSOP-6 N&P PAIR |
auf Bestellung 25258 Stücke: Lieferzeit 10-14 Tag (e) |
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SI3585CDV-T1-GE3 | Vishay Siliconix |
Description: MOSFET N/P-CH 20V 3.9A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W, 1.3W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.9A, 2.1A Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 10V Rds On (Max) @ Id, Vgs: 58mOhm @ 2.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active |
auf Bestellung 156588 Stücke: Lieferzeit 10-14 Tag (e) |
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SI3585CDV-T1-GE3 | VISHAY |
Description: VISHAY - SI3585CDV-T1-GE3 - Dual-MOSFET, Komplementärer n- und p-Kanal, 20 V, 20 V, 3.9 A, 3.9 A, 0.048 ohm tariffCode: 85412900 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 3.9A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N Drain-Source-Spannung Vds, p-Kanal: 20V MSL: MSL 1 - unbegrenzt Dauer-Drainstrom Id, n-Kanal: 3.9A Drain-Source-Durchgangswiderstand, p-Kanal: 0.048ohm Verlustleistung, p-Kanal: 1.4W Drain-Source-Spannung Vds, n-Kanal: 20V SVHC: No SVHC (04-Feb-2026) Bauform - Transistor: TSOP Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.048ohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: Komplementärer n- und p-Kanal Verlustleistung, n-Kanal: 1.4W Betriebstemperatur, max.: 150°C |
auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SI3585CDV-T1-GE3 |
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Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 20/-20V; 3.1/-1.7A
Type of transistor: N/P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 3.1/-1.7A
Power dissipation: 0.9/8W
Case: SC74; TSOP6
Gate-source voltage: ±12V
On-state resistance: 78/316mΩ
Mounting: SMD
Gate charge: 4.8/9nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 20/-20V; 3.1/-1.7A
Type of transistor: N/P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 3.1/-1.7A
Power dissipation: 0.9/8W
Case: SC74; TSOP6
Gate-source voltage: ±12V
On-state resistance: 78/316mΩ
Mounting: SMD
Gate charge: 4.8/9nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 4180 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 85+ | 0.84 EUR |
| 126+ | 0.57 EUR |
| 178+ | 0.4 EUR |
| 205+ | 0.35 EUR |
| 500+ | 0.26 EUR |
| 1000+ | 0.23 EUR |
| SI3585CDV-T1-GE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs -20V Vds 12V Vgs TSOP-6 N&P PAIR
MOSFETs -20V Vds 12V Vgs TSOP-6 N&P PAIR
auf Bestellung 25258 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 1.32 EUR |
| 10+ | 0.82 EUR |
| 100+ | 0.53 EUR |
| 500+ | 0.4 EUR |
| 1000+ | 0.36 EUR |
| 3000+ | 0.31 EUR |
| 6000+ | 0.29 EUR |
| SI3585CDV-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 3.9A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W, 1.3W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.9A, 2.1A
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 10V
Rds On (Max) @ Id, Vgs: 58mOhm @ 2.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Description: MOSFET N/P-CH 20V 3.9A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W, 1.3W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.9A, 2.1A
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 10V
Rds On (Max) @ Id, Vgs: 58mOhm @ 2.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
auf Bestellung 156588 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 14+ | 1.32 EUR |
| 22+ | 0.81 EUR |
| 100+ | 0.53 EUR |
| 500+ | 0.4 EUR |
| 1000+ | 0.36 EUR |
| SI3585CDV-T1-GE3 |
|
Hersteller: VISHAY
Description: VISHAY - SI3585CDV-T1-GE3 - Dual-MOSFET, Komplementärer n- und p-Kanal, 20 V, 20 V, 3.9 A, 3.9 A, 0.048 ohm
tariffCode: 85412900
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 3.9A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: 20V
MSL: MSL 1 - unbegrenzt
Dauer-Drainstrom Id, n-Kanal: 3.9A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.048ohm
Verlustleistung, p-Kanal: 1.4W
Drain-Source-Spannung Vds, n-Kanal: 20V
SVHC: No SVHC (04-Feb-2026)
Bauform - Transistor: TSOP
Anzahl der Pins: 6Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.048ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: Komplementärer n- und p-Kanal
Verlustleistung, n-Kanal: 1.4W
Betriebstemperatur, max.: 150°C
Description: VISHAY - SI3585CDV-T1-GE3 - Dual-MOSFET, Komplementärer n- und p-Kanal, 20 V, 20 V, 3.9 A, 3.9 A, 0.048 ohm
tariffCode: 85412900
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 3.9A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: 20V
MSL: MSL 1 - unbegrenzt
Dauer-Drainstrom Id, n-Kanal: 3.9A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.048ohm
Verlustleistung, p-Kanal: 1.4W
Drain-Source-Spannung Vds, n-Kanal: 20V
SVHC: No SVHC (04-Feb-2026)
Bauform - Transistor: TSOP
Anzahl der Pins: 6Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.048ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: Komplementärer n- und p-Kanal
Verlustleistung, n-Kanal: 1.4W
Betriebstemperatur, max.: 150°C
auf Bestellung 24000 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH