SI3586DV-T1-E3 Vishay
Hersteller: VishayN/P-MOSFET; 20V; 8V; 100mOhm/220mOhm; 2,9A/2,1A; 830mW; -55°C ~ 150°C; SI3586DV-T1-E3 Vishay TSI3586dv
Anzahl je Verpackung: 10 Stücke
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 30+ | 1.18 EUR |
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Technische Details SI3586DV-T1-E3 Vishay
Description: MOSFET N/P-CH 20V 2.9A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 830mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.1A, Rds On (Max) @ Id, Vgs: 60mOhm @ 3.4A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: 6-TSOP.
Weitere Produktangebote SI3586DV-T1-E3
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SI3586DV-T1-E3 | Hersteller : Vishay |
Trans MOSFET N/P-CH 20V 2.9A/2.1A 6-Pin TSOP T/R |
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SI3586DV-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N/P-CH 20V 2.9A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 830mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.1A Rds On (Max) @ Id, Vgs: 60mOhm @ 3.4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 6-TSOP |
Produkt ist nicht verfügbar |
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SI3586DV-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N/P-CH 20V 2.9A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 830mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.1A Rds On (Max) @ Id, Vgs: 60mOhm @ 3.4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 6-TSOP |
Produkt ist nicht verfügbar |