Si3588DV-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 830mW, 83mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.5A, 570mA
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: 6-TSOP
Description: MOSFET N/P-CH 20V 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 830mW, 83mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.5A, 570mA
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: 6-TSOP
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Technische Details Si3588DV-T1-GE3 Vishay Siliconix
Description: MOSFET N/P-CH 20V 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 830mW, 83mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 2.5A, 570mA, Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 450mV @ 250µA (Min), Supplier Device Package: 6-TSOP.
Weitere Produktangebote Si3588DV-T1-GE3
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Si3588DV-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N/P-CH 20V 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 830mW, 83mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.5A, 570mA Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Supplier Device Package: 6-TSOP |
Produkt ist nicht verfügbar |
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Si3588DV-T1-GE3 | Hersteller : Vishay / Siliconix |
 MOSFET RECOMMENDED ALT 78-SI3585CDV-T1-GE3 |
Produkt ist nicht verfügbar |