Si3590DV-T1-GE3 Vishay Semiconductors
| Anzahl | Preis |
|---|---|
| 2+ | 1.72 EUR |
| 10+ | 1.16 EUR |
| 100+ | 0.78 EUR |
| 500+ | 0.68 EUR |
| 1000+ | 0.6 EUR |
| 3000+ | 0.5 EUR |
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Technische Details Si3590DV-T1-GE3 Vishay Semiconductors
Description: MOSFET N/P-CH 30V 2.5A 6TSOP, Rds On (Max) @ Id, Vgs: 77mOhm @ 3A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 2.5A, 1.7A, Drain to Source Voltage (Vdss): 30V, Power - Max: 830mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR), Part Status: Active, Supplier Device Package: 6-TSOP, Vgs(th) (Max) @ Id: 1.5V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V.
Weitere Produktangebote Si3590DV-T1-GE3 nach Preis ab 0.64 EUR bis 2.16 EUR
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Si3590DV-T1-GE3 | Vishay Siliconix |
 Description: MOSFET N/P-CH 30V 2.5A 6TSOPPackaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 830mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.5A, 1.7A Rds On (Max) @ Id, Vgs: 77mOhm @ 3A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active |
auf Bestellung 2256 Stücke: Lieferzeit 10-14 Tag (e) |
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| Si3590DV-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 2.5A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 830mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.5A, 1.7A
Rds On (Max) @ Id, Vgs: 77mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Description: MOSFET N/P-CH 30V 2.5A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 830mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.5A, 1.7A
Rds On (Max) @ Id, Vgs: 77mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
auf Bestellung 2256 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 2.16 EUR |
| 13+ | 1.36 EUR |
| 100+ | 0.9 EUR |
| 500+ | 0.7 EUR |
| 1000+ | 0.64 EUR |