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Si3900DV-T1-GE3

Si3900DV-T1-GE3 Vishay Siliconix

si3900dv.pdf Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 2A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 830mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2A
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.63 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details Si3900DV-T1-GE3 Vishay Siliconix

Description: MOSFET 2N-CH 20V 2A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 830mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 2A, Rds On (Max) @ Id, Vgs: 125mOhm @ 2.4A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: 6-TSOP.

Weitere Produktangebote Si3900DV-T1-GE3 nach Preis ab 0.59 EUR bis 1.52 EUR

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Si3900DV-T1-GE3 Si3900DV-T1-GE3 Hersteller : Vishay Siliconix si3900dv.pdf Description: MOSFET 2N-CH 20V 2A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 830mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2A
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
auf Bestellung 7142 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.51 EUR
15+1.24 EUR
100+0.97 EUR
500+0.82 EUR
1000+0.67 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
Si3900DV-T1-GE3 Si3900DV-T1-GE3 Hersteller : Vishay Semiconductors si3900dv.pdf MOSFET 20V Vds 12V Vgs TSOP-6
auf Bestellung 71085 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.52 EUR
10+1.25 EUR
100+0.97 EUR
500+0.83 EUR
1000+0.67 EUR
3000+0.61 EUR
6000+0.59 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
Si3900DV-T1-GE3 Hersteller : VISHAY si3900dv.pdf SI3900DV-T1-GE3 SMD N channel transistors
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