Technische Details SI3911DV-T1-E3 VISHAY
Description: MOSFET 2P-CH 20V 1.8A 6TSOP, Packaging: Cut Tape (CT), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Technology: MOSFET (Metal Oxide), Power - Max: 830mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 1.8A, Rds On (Max) @ Id, Vgs: 145mOhm @ 2.2A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 450mV @ 250µA (Min), Supplier Device Package: 6-TSOP.
Weitere Produktangebote SI3911DV-T1-E3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| SI3911DV-T1-E3 | Hersteller : VISHAY |
 06+ |
auf Bestellung 66000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI3911DV-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 20V 1.8A 6-Pin TSOP T/R |
Produkt ist nicht verfügbar |
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SI3911DV-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2P-CH 20V 1.8A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Technology: MOSFET (Metal Oxide) Power - Max: 830mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.8A Rds On (Max) @ Id, Vgs: 145mOhm @ 2.2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Supplier Device Package: 6-TSOP |
Produkt ist nicht verfügbar |
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SI3911DV-T1-E3 | Hersteller : Vishay / Siliconix |
MOSFET RECOMMENDED ALT 78-SI3993CDV-T1-GE3 |
Produkt ist nicht verfügbar |