Technische Details SI3948DV-T1-E3 VISHAY
Description: MOSFET 2N-CH 30V 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.15W, Drain to Source Voltage (Vdss): 30V, Rds On (Max) @ Id, Vgs: 105mOhm @ 2.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA (Min), Supplier Device Package: 6-TSOP.
Weitere Produktangebote SI3948DV-T1-E3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| SI3948DV-T1-E3 | Hersteller : VISHAY |
 09+ |
auf Bestellung 50618 Stücke: Lieferzeit 21-28 Tag (e) |
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SI3948DV-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 30V 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.15W Drain to Source Voltage (Vdss): 30V Rds On (Max) @ Id, Vgs: 105mOhm @ 2.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: 6-TSOP |
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