SI4010DY-T1-GE3 Vishay / Siliconix

Description: MOSFET N-CHANNEL 30V 31.3A 8SO, Input Capacitance (Ciss) (Max) @ Vds: 3595 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): +20V, -16V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 2.3V @ 250µA, Power Dissipation (Max): 6W (Tc), Rds On (Max) @ Id, Vgs: 3.4mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 31.3A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TA), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).