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SI4108DY-T1-GE3

SI4108DY-T1-GE3 Vishay Siliconix

si4108dy.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 75V 20.5A 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 38 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 9.8mOhm @ 13.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 20.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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Technische Details SI4108DY-T1-GE3 Vishay Siliconix

Description: MOSFET N-CH 75V 20.5A 8-SOIC, Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 38 V, Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V, Drain to Source Voltage (Vdss): 75 V, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 4V @ 250µA, Rds On (Max) @ Id, Vgs: 9.8mOhm @ 13.8A, 10V, Current - Continuous Drain (Id) @ 25°C: 20.5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Cut Tape (CT).