auf Bestellung 181 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 161+ | 0.91 EUR |
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Technische Details SI4114DY-T1-GE3 Vishay
Description: MOSFET N-CH 20V 20A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V, Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: 8-SOIC, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 10 V.
Weitere Produktangebote SI4114DY-T1-GE3 nach Preis ab 1.04 EUR bis 2.71 EUR
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SI4114DY-T1-GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 20V 20A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 10 V |
auf Bestellung 275000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4114DY-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 20V 20A 8-Pin SOIC N T/R |
auf Bestellung 384 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4114DY-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 20V 20A 8-Pin SOIC N T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4114DY-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 20V 20A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 10 V |
auf Bestellung 276862 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4114DY-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFET 20V Vds 16V Vgs SO-8 |
auf Bestellung 12468 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4114DY-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 20V 20A 8-Pin SOIC N T/R |
auf Bestellung 181 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4114DY-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 20V 20A 8-Pin SOIC N T/R |
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