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Technische Details SI4114DY-T1-GE3 Vishay
Description: MOSFET N-CH 20V 20A 8SO, Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±16V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 2.1V @ 250µA, Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote SI4114DY-T1-GE3 nach Preis ab 1.24 EUR bis 3.22 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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SI4114DY-T1-GE3 | Vishay Siliconix |
 Description: MOSFET N-CH 20V 20A 8SOInput Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 2.1V @ 250µA Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
auf Bestellung 275000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4114DY-T1-GE3 | Vishay |
Trans MOSFET N-CH 20V 20A 8-Pin SOIC N T/R |
auf Bestellung 384 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4114DY-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 20V 20A 8SO Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 2.1V @ 250µA Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 276862 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4114DY-T1-GE3 | Vishay |
Trans MOSFET N-CH 20V 20A 8-Pin SOIC N T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4114DY-T1-GE3 | Vishay Semiconductors |
MOSFET 20V Vds 16V Vgs SO-8 |
auf Bestellung 12468 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4114DY-T1-GE3 | Vishay |
Trans MOSFET N-CH 20V 20A 8-Pin SOIC N T/R |
auf Bestellung 181 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH |
| SI4114DY-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 20A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 20V 20A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 275000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.24 EUR |
| SI4114DY-T1-GE3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 20V 20A 8-Pin SOIC N T/R
Trans MOSFET N-CH 20V 20A 8-Pin SOIC N T/R
auf Bestellung 384 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 136+ | 1.3 EUR |
| SI4114DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 20A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 20V 20A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 276862 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 1.71 EUR |
| 14+ | 1.55 EUR |
| 500+ | 1.54 EUR |
| 1000+ | 1.51 EUR |
| SI4114DY-T1-GE3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 20V 20A 8-Pin SOIC N T/R
Trans MOSFET N-CH 20V 20A 8-Pin SOIC N T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.73 EUR |
| SI4114DY-T1-GE3 |
|
Hersteller: Vishay Semiconductors
MOSFET 20V Vds 16V Vgs SO-8
MOSFET 20V Vds 16V Vgs SO-8
auf Bestellung 12468 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 3.22 EUR |
| 10+ | 2.89 EUR |
| 100+ | 2.32 EUR |
| 500+ | 1.93 EUR |
| 1000+ | 1.58 EUR |
| 2500+ | 1.48 EUR |
| 5000+ | 1.34 EUR |
| SI4114DY-T1-GE3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 20V 20A 8-Pin SOIC N T/R
Trans MOSFET N-CH 20V 20A 8-Pin SOIC N T/R
auf Bestellung 181 Stücke:
Lieferzeit 14-21 Tag (e)