auf Bestellung 2016 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 92+ | 1.54 EUR |
| 93+ | 1.47 EUR |
| 100+ | 1.41 EUR |
| 250+ | 1.35 EUR |
| 500+ | 1.29 EUR |
| 1000+ | 1.23 EUR |
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Produktbewertung abgeben
Technische Details SI4126DY-T1-GE3 Vishay
Description: MOSFET N-CH 30V 39A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 39A (Tc), Rds On (Max) @ Id, Vgs: 2.75mOhm @ 15A, 10V, Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOIC, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4405 pF @ 15 V.
Weitere Produktangebote SI4126DY-T1-GE3 nach Preis ab 1.23 EUR bis 4.47 EUR
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SI4126DY-T1-GE3 | Hersteller : Vishay |
 Trans MOSFET N-CH 30V 39A 8-Pin SOIC N T/R |
auf Bestellung 2016 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4126DY-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 39A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Rds On (Max) @ Id, Vgs: 2.75mOhm @ 15A, 10V Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4405 pF @ 15 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4126DY-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 39A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Rds On (Max) @ Id, Vgs: 2.75mOhm @ 15A, 10V Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4405 pF @ 15 V |
auf Bestellung 7132 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4126DY-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFETs 30V Vds 20V Vgs SO-8 |
auf Bestellung 2589 Stücke: Lieferzeit 10-14 Tag (e) |
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auf Bestellung 60000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI4126DY-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 39A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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| SI4126DY-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 39A; Idm: 70A; 7.8W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 39A Pulsed drain current: 70A Power dissipation: 7.8W Case: SO8 Gate-source voltage: ±20V On-state resistance: 3.4mΩ Mounting: SMD Gate charge: 105nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| SI4126DY-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 39A; Idm: 70A; 7.8W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 39A Pulsed drain current: 70A Power dissipation: 7.8W Case: SO8 Gate-source voltage: ±20V On-state resistance: 3.4mΩ Mounting: SMD Gate charge: 105nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |