SI4136DY-T1-GE3 Vishay Semiconductors
auf Bestellung 12974 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.9 EUR |
| 10+ | 1.44 EUR |
| 100+ | 1.16 EUR |
| 500+ | 1.14 EUR |
| 1000+ | 1.07 EUR |
| 2500+ | 0.99 EUR |
| 5000+ | 0.95 EUR |
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Technische Details SI4136DY-T1-GE3 Vishay Semiconductors
Description: MOSFET N-CH 20V 46A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 46A (Tc), Rds On (Max) @ Id, Vgs: 2mOhm @ 15A, 10V, Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-SOIC, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V.
Weitere Produktangebote SI4136DY-T1-GE3 nach Preis ab 1.16 EUR bis 2.29 EUR
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SI4136DY-T1-GE3 | Hersteller : Vishay |
 Trans MOSFET N-CH 20V 46A 8-Pin SOIC N T/R |
auf Bestellung 99 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4136DY-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 20V 46A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 15A, 10V Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V |
auf Bestellung 2126 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4136DY-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 20V 46A 8-Pin SOIC N T/R |
auf Bestellung 99 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4136DY-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 20V 46A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 15A, 10V Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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auf Bestellung 2450 Stücke: Lieferzeit 21-28 Tag (e) |
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SI4136DY-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 20V 46A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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| SI4136DY-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 46A; Idm: 70A; 7.8W Kind of package: reel; tape Case: SO8 Kind of channel: enhancement Mounting: SMD Technology: TrenchFET® Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 110nC On-state resistance: 2.5mΩ Power dissipation: 7.8W Drain-source voltage: 20V Gate-source voltage: ±20V Drain current: 46A Pulsed drain current: 70A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| SI4136DY-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 46A; Idm: 70A; 7.8W Kind of package: reel; tape Case: SO8 Kind of channel: enhancement Mounting: SMD Technology: TrenchFET® Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 110nC On-state resistance: 2.5mΩ Power dissipation: 7.8W Drain-source voltage: 20V Gate-source voltage: ±20V Drain current: 46A Pulsed drain current: 70A |
Produkt ist nicht verfügbar |