SI4202DY-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 12.1A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Rds On (Max) @ Id, Vgs: 14mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 12.1A
Drain to Source Voltage (Vdss): 30V
Power - Max: 3.7W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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Technische Details SI4202DY-T1-GE3 Vishay Siliconix
Description: MOSFET 2N-CH 30V 12.1A 8SOIC, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 2.5V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V, Rds On (Max) @ Id, Vgs: 14mOhm @ 8A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 12.1A, Drain to Source Voltage (Vdss): 30V, Power - Max: 3.7W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote SI4202DY-T1-GE3 nach Preis ab 0.87 EUR bis 3.13 EUR
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SI4202DY-T1-GE3 | Vishay Semiconductors |
MOSFETs 30V Vds 20V Vgs SO-8 |
auf Bestellung 5111 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4202DY-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 30V 12.1A 8SOIC Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Rds On (Max) @ Id, Vgs: 14mOhm @ 8A, 10V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 15V Current - Continuous Drain (Id) @ 25°C: 12.1A Drain to Source Voltage (Vdss): 30V Power - Max: 3.7W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 2.5V @ 250µA FET Feature: Logic Level Gate |
auf Bestellung 4846 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SI4202DY-T1-GE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs 30V Vds 20V Vgs SO-8
MOSFETs 30V Vds 20V Vgs SO-8
auf Bestellung 5111 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 2.9 EUR |
| 10+ | 1.97 EUR |
| 100+ | 1.35 EUR |
| 500+ | 1.08 EUR |
| 1000+ | 1 EUR |
| 2500+ | 0.93 EUR |
| 5000+ | 0.87 EUR |
| SI4202DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 12.1A 8SOIC
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Rds On (Max) @ Id, Vgs: 14mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 12.1A
Drain to Source Voltage (Vdss): 30V
Power - Max: 3.7W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Logic Level Gate
Description: MOSFET 2N-CH 30V 12.1A 8SOIC
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Rds On (Max) @ Id, Vgs: 14mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 12.1A
Drain to Source Voltage (Vdss): 30V
Power - Max: 3.7W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Logic Level Gate
auf Bestellung 4846 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 3.13 EUR |
| 10+ | 2 EUR |
| 100+ | 1.35 EUR |
| 500+ | 1.07 EUR |
| 1000+ | 0.98 EUR |