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Technische Details SI4202DY-T1-GE3 Vishay
Description: VISHAY - SI4202DY-T1-GE3 - Leistungs-MOSFET, n-Kanal, 30 V, 12.1 A, 0.0115 ohm, SOIC, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, euEccn: NLR, Drain-Source-Spannung Vds: 30V, rohsCompliant: Y-EX, Dauer-Drainstrom Id: 12.1A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, MSL: MSL 1 - unbegrenzt, Gate-Source-Schwellenspannung, max.: 1V, Verlustleistung: 3.7W, SVHC: Lead (04-Feb-2026), Bauform - Transistor: SOIC, Anzahl der Pins: 8Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n-Kanal, Betriebstemperatur, max.: 150°C, Rds(on)-Prüfspannung: 10V, Drain-Source-Durchgangswiderstand: 0.0115ohm.
Weitere Produktangebote SI4202DY-T1-GE3 nach Preis ab 0.77 EUR bis 4.93 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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SI4202DY-T1-GE3 | Vishay |
 Trans MOSFET N-CH 30V 12.1A 8-Pin SOIC N T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4202DY-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 30V 12.1A 8SOIC Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 2.5V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Rds On (Max) @ Id, Vgs: 14mOhm @ 8A, 10V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 15V Current - Continuous Drain (Id) @ 25°C: 12.1A Drain to Source Voltage (Vdss): 30V Power - Max: 3.7W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4202DY-T1-GE3 | Vishay Semiconductors |
MOSFETs 30V Vds 20V Vgs SO-8 |
auf Bestellung 5111 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4202DY-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 30V 12.1A 8SOIC Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Rds On (Max) @ Id, Vgs: 14mOhm @ 8A, 10V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 15V Current - Continuous Drain (Id) @ 25°C: 12.1A Drain to Source Voltage (Vdss): 30V Power - Max: 3.7W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 2.5V @ 250µA FET Feature: Logic Level Gate |
auf Bestellung 4135 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4202DY-T1-GE3 | VISHAY |
Description: VISHAY - SI4202DY-T1-GE3 - Leistungs-MOSFET, n-Kanal, 30 V, 12.1 A, 0.0115 ohm, SOIC, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 30V rohsCompliant: Y-EX Dauer-Drainstrom Id: 12.1A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 1V Verlustleistung: 3.7W SVHC: Lead (04-Feb-2026) Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.0115ohm |
auf Bestellung 6639 Stücke: Lieferzeit 14-21 Tag (e) |
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| SI4202DY-T1-GE3 |
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Hersteller: Vishay
Trans MOSFET N-CH 30V 12.1A 8-Pin SOIC N T/R
Trans MOSFET N-CH 30V 12.1A 8-Pin SOIC N T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.77 EUR |
| SI4202DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 12.1A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Rds On (Max) @ Id, Vgs: 14mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 12.1A
Drain to Source Voltage (Vdss): 30V
Power - Max: 3.7W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 30V 12.1A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Rds On (Max) @ Id, Vgs: 14mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 12.1A
Drain to Source Voltage (Vdss): 30V
Power - Max: 3.7W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.07 EUR |
| SI4202DY-T1-GE3 |
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Hersteller: Vishay Semiconductors
MOSFETs 30V Vds 20V Vgs SO-8
MOSFETs 30V Vds 20V Vgs SO-8
auf Bestellung 5111 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.45 EUR |
| 10+ | 2.34 EUR |
| 100+ | 1.61 EUR |
| 500+ | 1.29 EUR |
| 1000+ | 1.19 EUR |
| 2500+ | 1.11 EUR |
| 5000+ | 1.04 EUR |
| SI4202DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 12.1A 8SOIC
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Rds On (Max) @ Id, Vgs: 14mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 12.1A
Drain to Source Voltage (Vdss): 30V
Power - Max: 3.7W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Logic Level Gate
Description: MOSFET 2N-CH 30V 12.1A 8SOIC
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Rds On (Max) @ Id, Vgs: 14mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 12.1A
Drain to Source Voltage (Vdss): 30V
Power - Max: 3.7W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Logic Level Gate
auf Bestellung 4135 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.8 EUR |
| 10+ | 2.42 EUR |
| 100+ | 1.63 EUR |
| 500+ | 1.3 EUR |
| 1000+ | 1.18 EUR |
| SI4202DY-T1-GE3 |
|
Hersteller: VISHAY
Description: VISHAY - SI4202DY-T1-GE3 - Leistungs-MOSFET, n-Kanal, 30 V, 12.1 A, 0.0115 ohm, SOIC, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 30V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 12.1A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 1V
Verlustleistung: 3.7W
SVHC: Lead (04-Feb-2026)
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.0115ohm
Description: VISHAY - SI4202DY-T1-GE3 - Leistungs-MOSFET, n-Kanal, 30 V, 12.1 A, 0.0115 ohm, SOIC, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 30V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 12.1A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 1V
Verlustleistung: 3.7W
SVHC: Lead (04-Feb-2026)
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.0115ohm
auf Bestellung 6639 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 51+ | 4.93 EUR |
| 80+ | 2.9 EUR |
| 121+ | 1.78 EUR |
| 500+ | 1.46 EUR |
| 1000+ | 1.44 EUR |
| 5000+ | 1.15 EUR |