SI4204DY-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 19.8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.25W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 19.8A
Input Capacitance (Ciss) (Max) @ Vds: 2110pF @ 10V
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET 2N-CH 20V 19.8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.25W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 19.8A
Input Capacitance (Ciss) (Max) @ Vds: 2110pF @ 10V
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 27500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2500+ | 1.97 EUR |
5000+ | 1.89 EUR |
12500+ | 1.83 EUR |
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Produktbewertung abgeben
Technische Details SI4204DY-T1-GE3 Vishay Siliconix
Description: VISHAY - SI4204DY-T1-GE3 - Dual-MOSFET, n-Kanal, 20 V, 20 V, 19.8 A, 19.8 A, 0.0038 ohm, tariffCode: 85412900, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 19.8A, hazardous: false, rohsPhthalatesCompliant: YES, Drain-Source-Spannung Vds, p-Kanal: 20V, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 19.8A, Drain-Source-Durchgangswiderstand, p-Kanal: 0.0038ohm, Verlustleistung, p-Kanal: 3.25W, Drain-Source-Spannung Vds, n-Kanal: 20V, euEccn: NLR, Anzahl der Pins: 8Pins, Drain-Source-Durchgangswiderstand, n-Kanal: 0.0038ohm, productTraceability: Yes-Date/Lot Code, Verlustleistung, n-Kanal: 3.25W, Betriebstemperatur, max.: 150°C.
Weitere Produktangebote SI4204DY-T1-GE3 nach Preis ab 2.07 EUR bis 4.65 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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SI4204DY-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 20V 19.8A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.25W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 19.8A Input Capacitance (Ciss) (Max) @ Vds: 2110pF @ 10V Rds On (Max) @ Id, Vgs: 4.6mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
auf Bestellung 27506 Stücke: Lieferzeit 21-28 Tag (e) |
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SI4204DY-T1-GE3 | Hersteller : Vishay Semiconductors | MOSFET 20V Vds 20V Vgs SO-8 |
auf Bestellung 34370 Stücke: Lieferzeit 14-28 Tag (e) |
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SI4204DY-T1-GE3 | Hersteller : VISHAY |
Description: VISHAY - SI4204DY-T1-GE3 - Dual-MOSFET, n-Kanal, 20 V, 20 V, 19.8 A, 19.8 A, 0.0038 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 19.8A hazardous: false rohsPhthalatesCompliant: YES Drain-Source-Spannung Vds, p-Kanal: 20V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 19.8A Drain-Source-Durchgangswiderstand, p-Kanal: 0.0038ohm Verlustleistung, p-Kanal: 3.25W Drain-Source-Spannung Vds, n-Kanal: 20V euEccn: NLR Anzahl der Pins: 8Pins Drain-Source-Durchgangswiderstand, n-Kanal: 0.0038ohm productTraceability: Yes-Date/Lot Code Verlustleistung, n-Kanal: 3.25W Betriebstemperatur, max.: 150°C |
auf Bestellung 12312 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4204DY-T1-GE3 | Hersteller : Vishay | Trans MOSFET N-CH 20V 19.8A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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SI4204DY-T1-GE3 | Hersteller : VISHAY | SI4204DY-T1-GE3 SMD N channel transistors |
Produkt ist nicht verfügbar |