Si4214DDY-T1-E3 Vishay Semiconductors
auf Bestellung 15059 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.04 EUR |
| 10+ | 1.28 EUR |
| 100+ | 0.85 EUR |
| 500+ | 0.66 EUR |
| 1000+ | 0.6 EUR |
| 2500+ | 0.52 EUR |
| 5000+ | 0.51 EUR |
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Technische Details Si4214DDY-T1-E3 Vishay Semiconductors
Description: MOSFET 2N-CH 30V 8.5A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.1W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 8.5A, Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V, Rds On (Max) @ Id, Vgs: 19.5mOhm @ 8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active.
Weitere Produktangebote Si4214DDY-T1-E3 nach Preis ab 0.67 EUR bis 2.27 EUR
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Si4214DDY-T1-E3 | Hersteller : Vishay Siliconix |
 Description: MOSFET 2N-CH 30V 8.5A 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.5A Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V Rds On (Max) @ Id, Vgs: 19.5mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
auf Bestellung 1122 Stücke: Lieferzeit 10-14 Tag (e) |
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auf Bestellung 8200 Stücke: Lieferzeit 21-28 Tag (e) |
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SI4214DDY-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 8.5A 8-Pin SOIC N T/R |
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| Si4214DDY-T1-E3 | Hersteller : VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 7.5A; Idm: 30A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 7.5A Pulsed drain current: 30A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 19.5mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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Si4214DDY-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 30V 8.5A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.5A Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V Rds On (Max) @ Id, Vgs: 19.5mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
Produkt ist nicht verfügbar |
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| Si4214DDY-T1-E3 | Hersteller : VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 7.5A; Idm: 30A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 7.5A Pulsed drain current: 30A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 19.5mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |