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Technische Details SI4214DDY-T1-GE3 Vishay
Description: VISHAY - SI4214DDY-T1-GE3 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 8.5 A, 8.5 A, 0.016 ohm, tariffCode: 85412900, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 8.5A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, Drain-Source-Spannung Vds, p-Kanal: 30V, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 8.5A, Drain-Source-Durchgangswiderstand, p-Kanal: 0.016ohm, Verlustleistung, p-Kanal: 3.1W, Drain-Source-Spannung Vds, n-Kanal: 30V, euEccn: NLR, Bauform - Transistor: SOIC, Anzahl der Pins: 8Pin(s), Produktpalette: TrenchFET Series, Drain-Source-Durchgangswiderstand, n-Kanal: 0.016ohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 3.1W, Betriebstemperatur, max.: 150°C, SVHC: No SVHC (21-Jan-2025).
Weitere Produktangebote SI4214DDY-T1-GE3 nach Preis ab 0.39 EUR bis 2.09 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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SI4214DDY-T1-GE3 | Vishay |
 Trans MOSFET N-CH 30V 8.5A 8-Pin SOIC N T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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Si4214DDY-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 30V 8.5A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.5A Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V Rds On (Max) @ Id, Vgs: 19.5mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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Si4214DDY-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 30V 8.5A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.5A Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V Rds On (Max) @ Id, Vgs: 19.5mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
auf Bestellung 7284 Stücke: Lieferzeit 10-14 Tag (e) |
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Si4214DDY-T1-GE3 | Vishay Semiconductors |
MOSFETs 30V Vds 20V Vgs SO-8 |
auf Bestellung 7870 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4214DDY-T1-GE3 | VISHAY |
Description: VISHAY - SI4214DDY-T1-GE3 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 8.5 A, 8.5 A, 0.016 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 8.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 30V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 8.5A Drain-Source-Durchgangswiderstand, p-Kanal: 0.016ohm Verlustleistung, p-Kanal: 3.1W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.016ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 3.1W Betriebstemperatur, max.: 150°C SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 3036 Stücke: Lieferzeit 14-21 Tag (e) |
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| SI4214DDY-T1-GE3 |
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Hersteller: Vishay
Trans MOSFET N-CH 30V 8.5A 8-Pin SOIC N T/R
Trans MOSFET N-CH 30V 8.5A 8-Pin SOIC N T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.39 EUR |
| Si4214DDY-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.5A
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET 2N-CH 30V 8.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.5A
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.48 EUR |
| 5000+ | 0.44 EUR |
| Si4214DDY-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.5A
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET 2N-CH 30V 8.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.5A
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 7284 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 1.88 EUR |
| 18+ | 1.18 EUR |
| 100+ | 0.77 EUR |
| 500+ | 0.6 EUR |
| 1000+ | 0.54 EUR |
| Si4214DDY-T1-GE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs 30V Vds 20V Vgs SO-8
MOSFETs 30V Vds 20V Vgs SO-8
auf Bestellung 7870 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 1.92 EUR |
| 10+ | 1.2 EUR |
| 100+ | 0.79 EUR |
| 500+ | 0.61 EUR |
| 1000+ | 0.55 EUR |
| 2500+ | 0.49 EUR |
| 5000+ | 0.45 EUR |
| SI4214DDY-T1-GE3 |
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Hersteller: VISHAY
Description: VISHAY - SI4214DDY-T1-GE3 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 8.5 A, 8.5 A, 0.016 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 8.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: 30V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 8.5A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.016ohm
Verlustleistung, p-Kanal: 3.1W
Drain-Source-Spannung Vds, n-Kanal: 30V
euEccn: NLR
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.016ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 3.1W
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (21-Jan-2025)
Description: VISHAY - SI4214DDY-T1-GE3 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 8.5 A, 8.5 A, 0.016 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 8.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: 30V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 8.5A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.016ohm
Verlustleistung, p-Kanal: 3.1W
Drain-Source-Spannung Vds, n-Kanal: 30V
euEccn: NLR
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.016ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 3.1W
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (21-Jan-2025)
auf Bestellung 3036 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 120+ | 2.09 EUR |
| 173+ | 1.34 EUR |
| 253+ | 0.84 EUR |
| 500+ | 0.7 EUR |
| 1000+ | 0.69 EUR |