Si4228DY-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 25V 8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 12.5V
Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
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Technische Details Si4228DY-T1-GE3 Vishay Siliconix
Description: VISHAY - SI4228DY-T1-GE3 - Dual-MOSFET, Zweifach n-Kanal, 25 V, 8 A, 1.8 mohm, tariffCode: 85412900, euEccn: NLR, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: -, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, Drain-Source-Spannung Vds, p-Kanal: -, Dauer-Drainstrom Id, n-Kanal: 8A, Drain-Source-Durchgangswiderstand, p-Kanal: -, Verlustleistung, p-Kanal: -, Drain-Source-Spannung Vds, n-Kanal: 25V, SVHC: No SVHC (04-Feb-2026), Bauform - Transistor: SOIC, Anzahl der Pins: 8Pin(s), Produktpalette: TrenchFET Series, Drain-Source-Durchgangswiderstand, n-Kanal: 1.8mohm, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: Zweifach n-Kanal, Verlustleistung, n-Kanal: 3.1W, Betriebstemperatur, max.: 150°C.
Weitere Produktangebote Si4228DY-T1-GE3 nach Preis ab 0.65 EUR bis 3.15 EUR
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Si4228DY-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 25V 8A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 8A Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 12.5V Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
auf Bestellung 8721 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4228DY-T1-GE3 | VISHAY |
Description: VISHAY - SI4228DY-T1-GE3 - Dual-MOSFET, Zweifach n-Kanal, 25 V, 8 A, 1.8 mohm tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR isCanonical: Y hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 |
auf Bestellung 2200 Stücke: Lieferzeit 14-21 Tag (e) |
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Si4228DY-T1-GE3 | Vishay Semiconductors |
MOSFETs 25V Vds 12V Vgs SO-8 |
auf Bestellung 52294 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4228DY-T1-GE3 | VISHAY |
Description: VISHAY - SI4228DY-T1-GE3 - Dual-MOSFET, Zweifach n-Kanal, 25 V, 8 A, 1.8 mohm tariffCode: 85412900 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: - hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: - Dauer-Drainstrom Id, n-Kanal: 8A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: - Drain-Source-Spannung Vds, n-Kanal: 25V SVHC: No SVHC (04-Feb-2026) Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Series Drain-Source-Durchgangswiderstand, n-Kanal: 1.8mohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: Zweifach n-Kanal Verlustleistung, n-Kanal: 3.1W Betriebstemperatur, max.: 150°C |
auf Bestellung 2200 Stücke: Lieferzeit 14-21 Tag (e) |
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auf Bestellung 798200 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| Si4228DY-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 25V 8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 12.5V
Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET 2N-CH 25V 8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 12.5V
Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 8721 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14+ | 1.57 EUR |
| 17+ | 1.29 EUR |
| 100+ | 1 EUR |
| 500+ | 0.84 EUR |
| 1000+ | 0.69 EUR |
| SI4228DY-T1-GE3 |
|
Hersteller: VISHAY
Description: VISHAY - SI4228DY-T1-GE3 - Dual-MOSFET, Zweifach n-Kanal, 25 V, 8 A, 1.8 mohm
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
isCanonical: Y
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Description: VISHAY - SI4228DY-T1-GE3 - Dual-MOSFET, Zweifach n-Kanal, 25 V, 8 A, 1.8 mohm
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
isCanonical: Y
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
auf Bestellung 2200 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 150+ | 1.84 EUR |
| 190+ | 1.13 EUR |
| 500+ | 0.95 EUR |
| 1000+ | 0.87 EUR |
| Si4228DY-T1-GE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs 25V Vds 12V Vgs SO-8
MOSFETs 25V Vds 12V Vgs SO-8
auf Bestellung 52294 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.64 EUR |
| 10+ | 1.67 EUR |
| 100+ | 1.11 EUR |
| 500+ | 0.87 EUR |
| 1000+ | 0.79 EUR |
| 2500+ | 0.7 EUR |
| 5000+ | 0.65 EUR |
| SI4228DY-T1-GE3 |
|
Hersteller: VISHAY
Description: VISHAY - SI4228DY-T1-GE3 - Dual-MOSFET, Zweifach n-Kanal, 25 V, 8 A, 1.8 mohm
tariffCode: 85412900
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: -
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: -
Dauer-Drainstrom Id, n-Kanal: 8A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: -
Drain-Source-Spannung Vds, n-Kanal: 25V
SVHC: No SVHC (04-Feb-2026)
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Series
Drain-Source-Durchgangswiderstand, n-Kanal: 1.8mohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: Zweifach n-Kanal
Verlustleistung, n-Kanal: 3.1W
Betriebstemperatur, max.: 150°C
Description: VISHAY - SI4228DY-T1-GE3 - Dual-MOSFET, Zweifach n-Kanal, 25 V, 8 A, 1.8 mohm
tariffCode: 85412900
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: -
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: -
Dauer-Drainstrom Id, n-Kanal: 8A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: -
Drain-Source-Spannung Vds, n-Kanal: 25V
SVHC: No SVHC (04-Feb-2026)
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Series
Drain-Source-Durchgangswiderstand, n-Kanal: 1.8mohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: Zweifach n-Kanal
Verlustleistung, n-Kanal: 3.1W
Betriebstemperatur, max.: 150°C
auf Bestellung 2200 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 80+ | 3.15 EUR |
| 126+ | 1.84 EUR |
| 190+ | 1.13 EUR |
| 500+ | 0.95 EUR |
| 1000+ | 0.87 EUR |
| Si4228DY-T1-GE3 |
|
auf Bestellung 798200 Stücke:
Lieferzeit 21-28 Tag (e)