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Technische Details SI4286DY-T1-GE3 Vishay / Siliconix
Description: MOSFET 2N-CH 40V 7A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.9W, Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 7A, Input Capacitance (Ciss) (Max) @ Vds: 375pF @ 20V, Rds On (Max) @ Id, Vgs: 32.5mOhm @ 8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOIC.
Weitere Produktangebote SI4286DY-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| SI4286DY-T1-GE3 | Vishay Siliconix |
 2N-канальний ПТ, Udss, В = 40, Id = 7 А, Ptot, Вт = 2,9, Тип монт. = smd, Ciss, пФ @ Uds, В = 375 @ 20, Qg, нКл = 10.5 @ 10 B, Rds = 32.5 мОм @ 8 A , 10 B, Tексп, °C = -55...+150,... Транзистори Корпус: SOICN-8 Очікується: 2500 Од. вим: штAnzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
SI4286DY-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 40V 7A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.9W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 7A Input Capacitance (Ciss) (Max) @ Vds: 375pF @ 20V Rds On (Max) @ Id, Vgs: 32.5mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
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SI4286DY-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 40V 7A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.9W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 7A Input Capacitance (Ciss) (Max) @ Vds: 375pF @ 20V Rds On (Max) @ Id, Vgs: 32.5mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SI4286DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
2N-канальний ПТ, Udss, В = 40, Id = 7 А, Ptot, Вт = 2,9, Тип монт. = smd, Ciss, пФ @ Uds, В = 375 @ 20, Qg, нКл = 10.5 @ 10 B, Rds = 32.5 мОм @ 8 A , 10 B, Tексп, °C = -55...+150,... Транзистори Корпус: SOICN-8 Очікується: 2500 Од. вим: шт
Anzahl je Verpackung: 2500 Stücke
2N-канальний ПТ, Udss, В = 40, Id = 7 А, Ptot, Вт = 2,9, Тип монт. = smd, Ciss, пФ @ Uds, В = 375 @ 20, Qg, нКл = 10.5 @ 10 B, Rds = 32.5 мОм @ 8 A , 10 B, Tексп, °C = -55...+150,... Транзистори Корпус: SOICN-8 Очікується: 2500 Од. вим: шт
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SI4286DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.9W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 375pF @ 20V
Rds On (Max) @ Id, Vgs: 32.5mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Description: MOSFET 2N-CH 40V 7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.9W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 375pF @ 20V
Rds On (Max) @ Id, Vgs: 32.5mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SI4286DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 7A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.9W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 375pF @ 20V
Rds On (Max) @ Id, Vgs: 32.5mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Description: MOSFET 2N-CH 40V 7A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.9W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 375pF @ 20V
Rds On (Max) @ Id, Vgs: 32.5mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH