SI4330DY-T1-E3
Hersteller: auf Bestellung 89500 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details SI4330DY-T1-E3
Description: MOSFET 2N-CH 30V 6.6A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.1W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 6.6A, Rds On (Max) @ Id, Vgs: 16.5mOhm @ 8.7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Obsolete.
Weitere Produktangebote SI4330DY-T1-E3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| SI4330DYT1E3 | Hersteller : VISHAY |
auf Bestellung 50000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI4330DY-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 6.6A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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SI4330DY-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 6.6A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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SI4330DY-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 6.6A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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SI4330DY-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 30V 6.6A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.6A Rds On (Max) @ Id, Vgs: 16.5mOhm @ 8.7A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete |
Produkt ist nicht verfügbar |
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SI4330DY-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 30V 6.6A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.6A Rds On (Max) @ Id, Vgs: 16.5mOhm @ 8.7A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete |
Produkt ist nicht verfügbar |