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SI4386DY-T1-GE3

SI4386DY-T1-GE3 Vishay Siliconix


si4386dy.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 11A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V
Power Dissipation (Max): 1.47W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
auf Bestellung 1362 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.13 EUR
11+1.75 EUR
100+1.36 EUR
500+1.15 EUR
1000+0.94 EUR
Mindestbestellmenge: 9
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Technische Details SI4386DY-T1-GE3 Vishay Siliconix

Description: MOSFET N-CH 30V 11A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V, Power Dissipation (Max): 1.47W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOIC, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V.

Weitere Produktangebote SI4386DY-T1-GE3 nach Preis ab 1.15 EUR bis 3.19 EUR

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SI4386DY-T1-GE3 SI4386DY-T1-GE3 Hersteller : Vishay / Siliconix si4386dy.pdf MOSFETs 30V 16A 3.1W 7.0mohm @ 10V
auf Bestellung 2208 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.19 EUR
10+2.16 EUR
100+1.64 EUR
250+1.42 EUR
500+1.36 EUR
1000+1.21 EUR
2500+1.15 EUR
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SI4386DY-T1-GE3 SI4386DY-T1-GE3 Hersteller : Vishay 73109.pdf Trans MOSFET N-CH 30V 11A 8-Pin SOIC N T/R
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SI4386DY-T1-GE3 Hersteller : VISHAY si4386dy.pdf SI4386DY-T1-GE3 SMD N channel transistors
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SI4386DY-T1-GE3 SI4386DY-T1-GE3 Hersteller : Vishay Siliconix si4386dy.pdf Description: MOSFET N-CH 30V 11A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V
Power Dissipation (Max): 1.47W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH