 
SI4401BDY UMW
 Hersteller: UMW
                                                Hersteller: UMWDescription: MOSFET P-CH 40V 8.7A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
auf Bestellung 2940 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis | 
|---|---|
| 12+ | 1.48 EUR | 
| 20+ | 0.92 EUR | 
| 100+ | 0.6 EUR | 
| 500+ | 0.46 EUR | 
| 1000+ | 0.41 EUR | 
Produktrezensionen
Produktbewertung abgeben
Technische Details SI4401BDY UMW
Description: MOSFET P-CH 40V 8.7A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 155°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), Rds On (Max) @ Id, Vgs: 14mOhm @ 10.5A, 10V, Power Dissipation (Max): 1.5W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V. 
Weitere Produktangebote SI4401BDY nach Preis ab 1.69 EUR bis 1.69 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis | ||||
|---|---|---|---|---|---|---|---|---|---|
| SI4401BDY | Hersteller : Siliconix |  Transistor P-Channel MOSFET; 40V; 20V; 21mOhm; 8,7A; 1,5W; -55°C ~ 150°C; SI4401BDY TSI4401bdy Anzahl je Verpackung: 10 Stücke | auf Bestellung 47 Stücke:Lieferzeit 7-14 Tag (e) | 
 | |||||
|   | SI4401BDY | Hersteller : UMW |  Description: MOSFET P-CH 40V 8.7A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta) Rds On (Max) @ Id, Vgs: 14mOhm @ 10.5A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V | Produkt ist nicht verfügbar |