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Technische Details SI4421DY-T1-E3 Vishay
Description: MOSFET P-CH 20V 10A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), Rds On (Max) @ Id, Vgs: 8.75mOhm @ 14A, 4.5V, Power Dissipation (Max): 1.5W (Ta), Vgs(th) (Max) @ Id: 800mV @ 850µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 4.5 V.
Weitere Produktangebote SI4421DY-T1-E3 nach Preis ab 1.36 EUR bis 6.39 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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SI4421DY-T1-E3 | Vishay |
 Trans MOSFET P-CH 20V 10A 8-Pin SOIC N T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4421DY-T1-E3 | Vishay Siliconix |
Description: MOSFET P-CH 20V 10A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 8.75mOhm @ 14A, 4.5V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 800mV @ 850µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 4.5 V |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4421DY-T1-E3 | Vishay |
Trans MOSFET P-CH 20V 10A 8-Pin SOIC N T/R |
auf Bestellung 307 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4421DY-T1-E3 | Vishay |
Trans MOSFET P-CH 20V 10A 8-Pin SOIC N T/R |
auf Bestellung 307 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4421DY-T1-E3 | Vishay Semiconductors |
MOSFET 20 Volt 14 Amp |
auf Bestellung 5783 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4421DY-T1-E3 | Vishay Siliconix |
Description: MOSFET P-CH 20V 10A 8SO Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Packaging: Cut Tape (CT) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 800mV @ 850µA Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 8.75mOhm @ 14A, 4.5V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) |
auf Bestellung 8798 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI4421DY-T1-E3 | VISHAY |
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auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| SI4421DYT1E3 | VISHAY |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SI4421DY-T1-E3 |
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Hersteller: Vishay
Trans MOSFET P-CH 20V 10A 8-Pin SOIC N T/R
Trans MOSFET P-CH 20V 10A 8-Pin SOIC N T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.36 EUR |
| SI4421DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 10A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 8.75mOhm @ 14A, 4.5V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 800mV @ 850µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 4.5 V
Description: MOSFET P-CH 20V 10A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 8.75mOhm @ 14A, 4.5V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 800mV @ 850µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 4.5 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 2 EUR |
| SI4421DY-T1-E3 |
|
Hersteller: Vishay
Trans MOSFET P-CH 20V 10A 8-Pin SOIC N T/R
Trans MOSFET P-CH 20V 10A 8-Pin SOIC N T/R
auf Bestellung 307 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 76+ | 2.34 EUR |
| 97+ | 1.76 EUR |
| 98+ | 1.62 EUR |
| 100+ | 1.55 EUR |
| 250+ | 1.49 EUR |
| SI4421DY-T1-E3 |
|
Hersteller: Vishay
Trans MOSFET P-CH 20V 10A 8-Pin SOIC N T/R
Trans MOSFET P-CH 20V 10A 8-Pin SOIC N T/R
auf Bestellung 307 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 76+ | 2.34 EUR |
| 97+ | 1.8 EUR |
| 98+ | 1.7 EUR |
| 100+ | 1.68 EUR |
| 250+ | 1.65 EUR |
| SI4421DY-T1-E3 |
|
Hersteller: Vishay Semiconductors
MOSFET 20 Volt 14 Amp
MOSFET 20 Volt 14 Amp
auf Bestellung 5783 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.94 EUR |
| 10+ | 3.27 EUR |
| 100+ | 2.62 EUR |
| 500+ | 2.2 EUR |
| 1000+ | 2.02 EUR |
| SI4421DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 10A 8SO
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Packaging: Cut Tape (CT)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 800mV @ 850µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 8.75mOhm @ 14A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Description: MOSFET P-CH 20V 10A 8SO
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Packaging: Cut Tape (CT)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 800mV @ 850µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 8.75mOhm @ 14A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
auf Bestellung 8798 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.39 EUR |
| 10+ | 4.15 EUR |
| 100+ | 2.88 EUR |
| 500+ | 2.33 EUR |
| 1000+ | 2.17 EUR |
| SI4421DY-T1-E3 |
|
Hersteller: VISHAY
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
| SI4421DYT1E3 |
Hersteller: VISHAY
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)