SI4423DY-T1-GE3 Vishay / Siliconix
auf Bestellung 2442 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.19 EUR |
| 10+ | 3.48 EUR |
| 100+ | 2.78 EUR |
| 250+ | 2.57 EUR |
| 500+ | 2.32 EUR |
| 1000+ | 1.99 EUR |
| 2500+ | 1.88 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI4423DY-T1-GE3 Vishay / Siliconix
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -14A; Idm: -50A, Type of transistor: P-MOSFET, Technology: TrenchFET®, Polarisation: unipolar, Drain-source voltage: -20V, Drain current: -14A, Power dissipation: 3W, Case: SO8, Gate-source voltage: ±8V, On-state resistance: 11.5mΩ, Mounting: SMD, Gate charge: 175nC, Kind of package: reel; tape, Kind of channel: enhancement, Pulsed drain current: -50A.
Weitere Produktangebote SI4423DY-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
SI4423DY-T1-GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET P-CH 20V 10A 8-SOIC |
Produkt ist nicht verfügbar |
|
| SI4423DY-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -14A; Idm: -50A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -14A Power dissipation: 3W Case: SO8 Gate-source voltage: ±8V On-state resistance: 11.5mΩ Mounting: SMD Gate charge: 175nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: -50A |
Produkt ist nicht verfügbar |