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Technische Details SI4425BDY-T1-E3 Vishay
Description: MOSFET P-CH 30V 8.8A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), Rds On (Max) @ Id, Vgs: 12mOhm @ 11.4A, 10V, Power Dissipation (Max): 1.5W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V.
Weitere Produktangebote SI4425BDY-T1-E3 nach Preis ab 0.24 EUR bis 3.53 EUR
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SI4425BDY-T1-E3 | Vishay |
 Trans MOSFET P-CH 30V 8.8A 8-Pin SOIC N T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4425BDY-T1-E3 | Vishay Siliconix |
Description: MOSFET P-CH 30V 8.8A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta) Rds On (Max) @ Id, Vgs: 12mOhm @ 11.4A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4425BDY-T1-E3 | Vishay |
Trans MOSFET P-CH 30V 8.8A 8-Pin SOIC N T/R |
auf Bestellung 2492 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4425BDY-T1-E3 | Vishay |
Trans MOSFET P-CH 30V 8.8A 8-Pin SOIC N T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4425BDY-T1-E3 | Vishay Semiconductors |
MOSFETs 30V 11A 2.5W |
auf Bestellung 55815 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4425BDY-T1-E3 | Vishay Siliconix |
Description: MOSFET P-CH 30V 8.8A 8SO Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 12mOhm @ 11.4A, 10V Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 2716 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI4425BDYT1E3 | VISHAY |
auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SI4425BDY-T1-E3 |
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Hersteller: Vishay
Trans MOSFET P-CH 30V 8.8A 8-Pin SOIC N T/R
Trans MOSFET P-CH 30V 8.8A 8-Pin SOIC N T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.24 EUR |
| SI4425BDY-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 8.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 11.4A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Description: MOSFET P-CH 30V 8.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 11.4A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.99 EUR |
| SI4425BDY-T1-E3 |
|
Hersteller: Vishay
Trans MOSFET P-CH 30V 8.8A 8-Pin SOIC N T/R
Trans MOSFET P-CH 30V 8.8A 8-Pin SOIC N T/R
auf Bestellung 2492 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 103+ | 1.71 EUR |
| 140+ | 1.25 EUR |
| 500+ | 1 EUR |
| 1000+ | 0.92 EUR |
| SI4425BDY-T1-E3 |
|
Hersteller: Vishay
Trans MOSFET P-CH 30V 8.8A 8-Pin SOIC N T/R
Trans MOSFET P-CH 30V 8.8A 8-Pin SOIC N T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 84+ | 2.11 EUR |
| 103+ | 1.67 EUR |
| 139+ | 1.18 EUR |
| 500+ | 0.94 EUR |
| 1000+ | 0.83 EUR |
| 2500+ | 0.73 EUR |
| SI4425BDY-T1-E3 |
|
Hersteller: Vishay Semiconductors
MOSFETs 30V 11A 2.5W
MOSFETs 30V 11A 2.5W
auf Bestellung 55815 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.87 EUR |
| 10+ | 2.26 EUR |
| 100+ | 1.84 EUR |
| 500+ | 1.56 EUR |
| 1000+ | 1.44 EUR |
| SI4425BDY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 8.8A 8SO
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 11.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 30V 8.8A 8SO
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 11.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 2716 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.53 EUR |
| 10+ | 2.25 EUR |
| 100+ | 1.51 EUR |
| 500+ | 1.2 EUR |
| 1000+ | 1.09 EUR |
| SI4425BDYT1E3 |
Hersteller: VISHAY
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)