SI4425BDY-T1-GE3 Vishay / Siliconix
| Anzahl | Preis |
|---|---|
| 2+ | 2.34 EUR |
| 10+ | 2.11 EUR |
| 100+ | 1.49 EUR |
| 500+ | 1.27 EUR |
| 1000+ | 1.21 EUR |
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Technische Details SI4425BDY-T1-GE3 Vishay / Siliconix
Description: MOSFET P-CH 30V 8.8A 8SO, Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 1.5W (Ta), Rds On (Max) @ Id, Vgs: 12mOhm @ 11.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote SI4425BDY-T1-GE3 nach Preis ab 1.43 EUR bis 4.36 EUR
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SI4425BDY-T1-GE3 | Vishay Siliconix |
 Description: MOSFET P-CH 30V 8.8A 8SOGate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 12mOhm @ 11.4A, 10V Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 2644 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI4425BDY-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 8.8A 8SO
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 11.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 30V 8.8A 8SO
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 11.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 2644 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 4.36 EUR |
| 10+ | 2.81 EUR |
| 100+ | 1.93 EUR |
| 500+ | 1.56 EUR |
| 1000+ | 1.43 EUR |