Technische Details SI4425DY SIL
Description: P-CHANNEL MOSFET, Packaging: Bulk, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), Rds On (Max) @ Id, Vgs: 14mOhm @ 11A, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 15 V.
Weitere Produktangebote SI4425DY
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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SI4425DY | Hersteller : FAIRCHILD | 09+ |
auf Bestellung 218 Stücke: Lieferzeit 21-28 Tag (e) |
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SI4425DY | Hersteller : VISHAY | 09+ |
auf Bestellung 598 Stücke: Lieferzeit 21-28 Tag (e) |
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SI4425DY | Hersteller : Vishay | Trans MOSFET P-CH 30V 8A 8-Pin SOIC N |
Produkt ist nicht verfügbar |
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SI4425DY | Hersteller : Fairchild Semiconductor |
Description: P-CHANNEL MOSFET Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 14mOhm @ 11A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 15 V |
Produkt ist nicht verfügbar |