SI4425FDY-T1-GE3 VISHAY
Hersteller: VISHAY
Description: VISHAY - SI4425FDY-T1-GE3 - P-CHANNEL 30-V (D-S) MOSFET 42AJ0614
tariffCode: 0
Transistormontage: Surface Mount
euEccn: NLR
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 18.3A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 2.2V
Verlustleistung: 4.8W
SVHC: Lead (04-Feb-2026)
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: P Channel
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.0095ohm
directShipCharge: 25
| Anzahl | Privatkunde |
|---|---|
| 118+ | 2.12 EUR |
| 144+ | 1.62 EUR |
| 199+ | 1.08 EUR |
| 500+ | 0.96 EUR |
| 1000+ | 0.87 EUR |
| 2500+ | 0.74 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
14-21 Tag (e)
Mindestmenge:
118 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details SI4425FDY-T1-GE3 VISHAY
Description: MOSFET P-CH 30V 12.7/18.3A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 18.3A (Tc), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V, Power Dissipation (Max): 2.3W (Ta), 4.8W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +16V, -20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 15 V.
Weitere Produktangebote SI4425FDY-T1-GE3 nach Preis ab 0.57 EUR bis 2.28 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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SI4425FDY-T1-GE3 | Vishay / Siliconix |
MOSFETs SO8 P-CH 30V 12.7A |
auf Bestellung 53514 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4425FDY-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 30V 12.7/18.3A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 18.3A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V Power Dissipation (Max): 2.3W (Ta), 4.8W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +16V, -20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 15 V |
auf Bestellung 1687 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI4425FDY-T1-GE3 |
|
Hersteller: Vishay / Siliconix
MOSFETs SO8 P-CH 30V 12.7A
MOSFETs SO8 P-CH 30V 12.7A
auf Bestellung 53514 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.26 EUR |
| 10+ | 1.05 EUR |
| 100+ | 1.01 EUR |
| 500+ | 0.8 EUR |
| 1000+ | 0.74 EUR |
| 2500+ | 0.62 EUR |
| 5000+ | 0.57 EUR |
| SI4425FDY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 12.7/18.3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 18.3A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 2.3W (Ta), 4.8W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 15 V
Description: MOSFET P-CH 30V 12.7/18.3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 18.3A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 2.3W (Ta), 4.8W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 15 V
auf Bestellung 1687 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.28 EUR |
| 15+ | 1.44 EUR |
| 50+ | 1.06 EUR |
| 100+ | 0.94 EUR |
| 500+ | 0.73 EUR |