SI4434DY-T1-GE3 Vishay
Hersteller: Vishay
SI4434DY-T1-GE3 Vishay MOSFETs Transistor N-CH 250V 2.1A 8-Pin SOIC N T/R - Arrow.com
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Technische Details SI4434DY-T1-GE3 Vishay
Description: MOSFET N-CH 250V 2.1A 8SO, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Drain to Source Voltage (Vdss): 250 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Active, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 1.56W (Ta), Rds On (Max) @ Id, Vgs: 155mOhm @ 3A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote SI4434DY-T1-GE3 nach Preis ab 2.28 EUR bis 7.5 EUR
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SI4434DY-T1-GE3 | Vishay |
SI4434DY-T1-GE3 Vishay MOSFETs Transistor N-CH 250V 2.1A 8-Pin SOIC N T/R - Arrow.com |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4434DY-T1-GE3 | Vishay Semiconductors |
MOSFETs 250V Vds 20V Vgs SO-8 |
auf Bestellung 5367 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4434DY-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 250V 2.1A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta) Rds On (Max) @ Id, Vgs: 155mOhm @ 3A, 10V Power Dissipation (Max): 1.56W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V |
auf Bestellung 2365 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI4434DY-T1-GE3 |
|
Hersteller: Vishay
SI4434DY-T1-GE3 Vishay MOSFETs Transistor N-CH 250V 2.1A 8-Pin SOIC N T/R - Arrow.com
SI4434DY-T1-GE3 Vishay MOSFETs Transistor N-CH 250V 2.1A 8-Pin SOIC N T/R - Arrow.com
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 2.28 EUR |
| SI4434DY-T1-GE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs 250V Vds 20V Vgs SO-8
MOSFETs 250V Vds 20V Vgs SO-8
auf Bestellung 5367 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.3 EUR |
| 10+ | 4.44 EUR |
| 25+ | 4.21 EUR |
| 100+ | 3.61 EUR |
| 250+ | 3.42 EUR |
| 500+ | 3.17 EUR |
| 1000+ | 2.67 EUR |
| SI4434DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 2.1A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 3A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Description: MOSFET N-CH 250V 2.1A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 3A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
auf Bestellung 2365 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.5 EUR |
| 10+ | 4.94 EUR |
| 100+ | 3.49 EUR |
| 500+ | 2.86 EUR |
| 1000+ | 2.65 EUR |