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SI4435FDY-T1-GE3

SI4435FDY-T1-GE3 Vishay Siliconix

si4435fdy.pdf
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 12.6A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.6A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 9A, 10V
Power Dissipation (Max): 4.8W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
auf Bestellung 97500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.28 EUR
5000+0.26 EUR
7500+0.24 EUR
12500+0.23 EUR
17500+0.22 EUR
25000+0.21 EUR
Mindestbestellmenge: 2500
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Technische Details SI4435FDY-T1-GE3 Vishay Siliconix

Description: MOSFET P-CH 30V 12.6A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 12.6A (Tc), Rds On (Max) @ Id, Vgs: 19mOhm @ 9A, 10V, Power Dissipation (Max): 4.8W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V.

Weitere Produktangebote SI4435FDY-T1-GE3 nach Preis ab 0.21 EUR bis 1.18 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
SI4435FDY-T1-GE3 SI4435FDY-T1-GE3 Vishay si4435fdy.pdf Trans MOSFET P-CH 30V 12.6A 8-Pin SOIC N T/R
auf Bestellung 2166 Stücke:
Lieferzeit 14-21 Tag (e)
276+0.52 EUR
500+0.33 EUR
1000+0.29 EUR
Mindestbestellmenge: 276
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SI4435FDY-T1-GE3 SI4435FDY-T1-GE3 VISHAY si4435fdy.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -12.6A; Idm: -32A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -12.6A
Pulsed drain current: -32A
Power dissipation: 4.8W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2166 Stücke:
Lieferzeit 14-21 Tag (e)
95+0.76 EUR
139+0.51 EUR
195+0.37 EUR
226+0.32 EUR
500+0.22 EUR
1000+0.21 EUR
Mindestbestellmenge: 95
Im Einkaufswagen  Stück im Wert von  UAH
SI4435FDY-T1-GE3 SI4435FDY-T1-GE3 Vishay Siliconix si4435fdy.pdf Description: MOSFET P-CH 30V 12.6A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.6A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 9A, 10V
Power Dissipation (Max): 4.8W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
auf Bestellung 100033 Stücke:
Lieferzeit 10-14 Tag (e)
16+1.16 EUR
25+0.72 EUR
100+0.47 EUR
500+0.35 EUR
1000+0.32 EUR
Mindestbestellmenge: 16
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SI4435FDY-T1-GE3 SI4435FDY-T1-GE3 Vishay / Siliconix si4435fdy.pdf MOSFETs -30V Vds 20V Vgs SO-8
auf Bestellung 186658 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.18 EUR
10+0.73 EUR
100+0.47 EUR
500+0.36 EUR
1000+0.32 EUR
2500+0.28 EUR
5000+0.24 EUR
Mindestbestellmenge: 3
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SI4435FDY-T1-GE3 si4435fdy.pdf
SI4435FDY-T1-GE3
Hersteller: Vishay
Trans MOSFET P-CH 30V 12.6A 8-Pin SOIC N T/R
auf Bestellung 2166 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
276+0.52 EUR
500+0.33 EUR
1000+0.29 EUR
Mindestbestellmenge: 276
Im Einkaufswagen  Stück im Wert von  UAH
SI4435FDY-T1-GE3 si4435fdy.pdf
SI4435FDY-T1-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -12.6A; Idm: -32A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -12.6A
Pulsed drain current: -32A
Power dissipation: 4.8W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2166 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
95+0.76 EUR
139+0.51 EUR
195+0.37 EUR
226+0.32 EUR
500+0.22 EUR
1000+0.21 EUR
Mindestbestellmenge: 95
Im Einkaufswagen  Stück im Wert von  UAH
SI4435FDY-T1-GE3 si4435fdy.pdf
SI4435FDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 12.6A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.6A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 9A, 10V
Power Dissipation (Max): 4.8W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
auf Bestellung 100033 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.16 EUR
25+0.72 EUR
100+0.47 EUR
500+0.35 EUR
1000+0.32 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
SI4435FDY-T1-GE3 si4435fdy.pdf
SI4435FDY-T1-GE3
Hersteller: Vishay / Siliconix
MOSFETs -30V Vds 20V Vgs SO-8
auf Bestellung 186658 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.18 EUR
10+0.73 EUR
100+0.47 EUR
500+0.36 EUR
1000+0.32 EUR
2500+0.28 EUR
5000+0.24 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH