auf Bestellung 4352 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 151+ | 0.96 EUR |
| 187+ | 0.75 EUR |
| 500+ | 0.6 EUR |
| 1000+ | 0.46 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI4436DY-T1-E3 Vishay
Description: MOSFET N-CH 60V 8A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 36mOhm @ 4.6A, 10V, Power Dissipation (Max): 2.5W (Ta), 5W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V.
Weitere Produktangebote SI4436DY-T1-E3 nach Preis ab 0.43 EUR bis 2.16 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
SI4436DY-T1-E3 | Hersteller : Vishay |
 Trans MOSFET N-CH 60V 8A 8-Pin SOIC N T/R |
auf Bestellung 4357 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
SI4436DY-T1-E3 | Hersteller : Vishay Semiconductors |
MOSFETs 60V Vds 20V Vgs SO-8 |
auf Bestellung 15946 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
SI4436DY-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 8A 8-Pin SOIC N T/R |
auf Bestellung 523 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
SI4436DY-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 60V 8A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 4.6A, 10V Power Dissipation (Max): 2.5W (Ta), 5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V |
auf Bestellung 3690 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
SI4436DY-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 8A 8-Pin SOIC N T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||||
| SI4436DYT1E3 | Hersteller : VISHAY |
auf Bestellung 15000 Stücke: Lieferzeit 21-28 Tag (e) |
|||||||||||||||||||
 |
SI4436DY-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 6.8A; Idm: 25A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 6.8A Pulsed drain current: 25A Power dissipation: 3.2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
SI4436DY-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 60V 8A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 4.6A, 10V Power Dissipation (Max): 2.5W (Ta), 5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
SI4436DY-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 6.8A; Idm: 25A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 6.8A Pulsed drain current: 25A Power dissipation: 3.2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |