auf Bestellung 12500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.56 EUR |
| 5000+ | 0.49 EUR |
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Technische Details SI4447ADY-T1-GE3 Vishay
Description: MOSFET P-CH 40V 7.2A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc), Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V, Power Dissipation (Max): 4.2W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOIC, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 20 V.
Weitere Produktangebote SI4447ADY-T1-GE3 nach Preis ab 0.56 EUR bis 1.38 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SI4447ADY-T1-GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET P-CH 40V 7.2A 8SOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V Power Dissipation (Max): 4.2W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 20 V |
auf Bestellung 5297 Stücke: Lieferzeit 21-28 Tag (e) |
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SI4447ADY-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFET -40V Vds 20V Vgs SO-8 |
auf Bestellung 20589 Stücke: Lieferzeit 14-28 Tag (e) |
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SI4447ADY-T1-GE3 | Hersteller : VISHAY |
Description: VISHAY - SI4447ADY-T1-GE3 - Leistungs-MOSFET, p-Kanal, 40 V, 7.2 A, 0.036 ohm, SOIC, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 7.2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.2V euEccn: NLR Verlustleistung: 4.2W Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.036ohm |
auf Bestellung 64772 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4447ADY-T1-GE3 | Hersteller : VISHAY |
Description: VISHAY - SI4447ADY-T1-GE3 - Leistungs-MOSFET, p-Kanal, 40 V, 7.2 A, 0.036 ohm, SOIC, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 7.2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: -888 MSL: -999 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.2V euEccn: NLR Verlustleistung: 4.2W Anzahl der Pins: 8Pin(s) Produktpalette: -999 productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.036ohm |
auf Bestellung 67637 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4447ADY-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 40V 7.2A 8-Pin SOIC N T/R |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4447ADY-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 40V 7.2A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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| SI4447ADY-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -7.2A; Idm: -20A Kind of package: reel; tape Mounting: SMD Pulsed drain current: -20A Power dissipation: 4.2W Gate charge: 38nC Polarisation: unipolar Technology: TrenchFET® Drain current: -7.2A Kind of channel: enhanced Drain-source voltage: -40V Type of transistor: P-MOSFET Gate-source voltage: ±20V Case: SO8 On-state resistance: 62mΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SI4447ADY-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 40V 7.2A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V Power Dissipation (Max): 4.2W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 20 V |
Produkt ist nicht verfügbar |
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| SI4447ADY-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -7.2A; Idm: -20A Kind of package: reel; tape Mounting: SMD Pulsed drain current: -20A Power dissipation: 4.2W Gate charge: 38nC Polarisation: unipolar Technology: TrenchFET® Drain current: -7.2A Kind of channel: enhanced Drain-source voltage: -40V Type of transistor: P-MOSFET Gate-source voltage: ±20V Case: SO8 On-state resistance: 62mΩ |
Produkt ist nicht verfügbar |