auf Bestellung 974 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 322+ | 0.49 EUR |
| 323+ | 0.47 EUR |
| 333+ | 0.44 EUR |
| 344+ | 0.41 EUR |
| 500+ | 0.38 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI4447DY-T1-GE3 Vishay
Description: MOSFET P-CH 40V 3.3A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), Rds On (Max) @ Id, Vgs: 72mOhm @ 4.5A, 15V, Power Dissipation (Max): 1.1W (Ta), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 805 pF @ 20 V.
Weitere Produktangebote SI4447DY-T1-GE3 nach Preis ab 0.36 EUR bis 4.46 EUR
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SI4447DY-T1-GE3 | Hersteller : Vishay |
 Trans MOSFET P-CH 40V 3.3A 8-Pin SOIC N T/R |
auf Bestellung 974 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4447DY-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 40V 3.3A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta) Rds On (Max) @ Id, Vgs: 72mOhm @ 4.5A, 15V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 805 pF @ 20 V |
auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) |
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SI4447DY-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFET 40V 4.5A 2.0W 54mohm @ 10V |
auf Bestellung 3596 Stücke: Lieferzeit 14-28 Tag (e) |
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SI4447DY-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 40V 3.3A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta) Rds On (Max) @ Id, Vgs: 72mOhm @ 4.5A, 15V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 805 pF @ 20 V |
auf Bestellung 4900 Stücke: Lieferzeit 21-28 Tag (e) |
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| SI4447DY-T1-GE3 | Hersteller : Vishay |
Транзистор SO8 (SOIC-8) MOSFET P-Ch -40V Vds Id =4,5A; 0,054 Ohm |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4447DY-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 40V 3.3A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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SI4447DY-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 40V 3.3A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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| SI4447DY-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -4.5A; Idm: -30A Kind of package: reel; tape Mounting: SMD Pulsed drain current: -30A Power dissipation: 2W Gate charge: 14nC Polarisation: unipolar Technology: TrenchFET® Drain current: -4.5A Kind of channel: enhanced Drain-source voltage: -40V Type of transistor: P-MOSFET Gate-source voltage: ±16V Case: SO8 On-state resistance: 72mΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SI4447DY-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -4.5A; Idm: -30A Kind of package: reel; tape Mounting: SMD Pulsed drain current: -30A Power dissipation: 2W Gate charge: 14nC Polarisation: unipolar Technology: TrenchFET® Drain current: -4.5A Kind of channel: enhanced Drain-source voltage: -40V Type of transistor: P-MOSFET Gate-source voltage: ±16V Case: SO8 On-state resistance: 72mΩ |
Produkt ist nicht verfügbar |