SI4455DY-T1-E3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET P-CH 150V 2.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 295mOhm @ 4A, 10V
Power Dissipation (Max): 3.1W (Ta), 5.9W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 50 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 1.31 EUR |
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Technische Details SI4455DY-T1-E3 Vishay Siliconix
Description: MOSFET P-CH 150V 2.8A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc), Rds On (Max) @ Id, Vgs: 295mOhm @ 4A, 10V, Power Dissipation (Max): 3.1W (Ta), 5.9W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-SOIC, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 50 V.
Weitere Produktangebote SI4455DY-T1-E3 nach Preis ab 1.19 EUR bis 3.63 EUR
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SI4455DY-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 150V 2A 8-Pin SOIC N T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4455DY-T1-E3 | Hersteller : Vishay Semiconductors |
MOSFETs -150V Vds 20V Vgs SO-8 |
auf Bestellung 9055 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4455DY-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 150V 2.8A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Rds On (Max) @ Id, Vgs: 295mOhm @ 4A, 10V Power Dissipation (Max): 3.1W (Ta), 5.9W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 50 V |
auf Bestellung 5588 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI4455DY-T1-E3 |
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auf Bestellung 35000 Stücke: Lieferzeit 21-28 Tag (e) |
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| SI4455DYT1E3 | Hersteller : VISHAY |
auf Bestellung 35000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI4455DY-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 150V 2A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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SI4455DY-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 150V 2A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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| SI4455DY-T1-E3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -2.3A; Idm: -15A Kind of package: reel; tape Type of transistor: P-MOSFET Power dissipation: 3.8W Polarisation: unipolar Gate charge: 23.2nC Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -15A Mounting: SMD Case: SO8 Drain-source voltage: -150V Drain current: -2.3A On-state resistance: 315mΩ Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| SI4455DY-T1-E3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -2.3A; Idm: -15A Kind of package: reel; tape Type of transistor: P-MOSFET Power dissipation: 3.8W Polarisation: unipolar Gate charge: 23.2nC Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -15A Mounting: SMD Case: SO8 Drain-source voltage: -150V Drain current: -2.3A On-state resistance: 315mΩ |
Produkt ist nicht verfügbar |