SI4455DY-T1-E3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 150V 2.8A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 5.9W (Tc)
Rds On (Max) @ Id, Vgs: 295mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 2500+ | 1.27 EUR |
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Technische Details SI4455DY-T1-E3 Vishay Siliconix
Description: MOSFET P-CH 150V 2.8A 8SO, Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 3.1W (Ta), 5.9W (Tc), Rds On (Max) @ Id, Vgs: 295mOhm @ 4A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote SI4455DY-T1-E3 nach Preis ab 1.15 EUR bis 3.34 EUR
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SI4455DY-T1-E3 | Vishay Semiconductors |
MOSFETs -150V Vds 20V Vgs SO-8 |
auf Bestellung 5823 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4455DY-T1-E3 | Vishay Siliconix |
Description: MOSFET P-CH 150V 2.8A 8SO Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.1W (Ta), 5.9W (Tc) Rds On (Max) @ Id, Vgs: 295mOhm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 4709 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI4455DY-T1-E3 |
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auf Bestellung 35000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SI4455DYT1E3 | VISHAY |
auf Bestellung 35000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SI4455DY-T1-E3 |
|
Hersteller: Vishay Semiconductors
MOSFETs -150V Vds 20V Vgs SO-8
MOSFETs -150V Vds 20V Vgs SO-8
auf Bestellung 5823 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 3.33 EUR |
| 10+ | 2.36 EUR |
| 100+ | 1.78 EUR |
| 500+ | 1.56 EUR |
| 2500+ | 1.25 EUR |
| 5000+ | 1.15 EUR |
| SI4455DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 150V 2.8A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 5.9W (Tc)
Rds On (Max) @ Id, Vgs: 295mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 150V 2.8A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 5.9W (Tc)
Rds On (Max) @ Id, Vgs: 295mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 4709 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 3.34 EUR |
| 10+ | 2.36 EUR |
| 100+ | 1.78 EUR |
| 500+ | 1.54 EUR |
| SI4455DY-T1-E3 |
|
auf Bestellung 35000 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| SI4455DYT1E3 |
Hersteller: VISHAY
auf Bestellung 35000 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH