| Anzahl | Privatkunde |
|---|---|
| 107+ | 1.68 EUR |
| 108+ | 1.63 EUR |
| 110+ | 1.57 EUR |
| 112+ | 1.51 EUR |
| 250+ | 1.46 EUR |
| 500+ | 1.42 EUR |
| 1000+ | 1.36 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
14-21 Tag (e)
Mindestmenge:
107 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details SI4456DY-T1-E3 Vishay
Description: MOSFET N-CH 40V 33A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 33A (Tc), Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V, Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc), Vgs(th) (Max) @ Id: 2.8V @ 250µA, Supplier Device Package: 8-SOIC, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5670 pF @ 20 V.
Weitere Produktangebote SI4456DY-T1-E3 nach Preis ab 1.19 EUR bis 6.18 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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SI4456DY-T1-E3 | Vishay |
 Trans MOSFET N-CH 40V 33A 8-Pin SOIC N T/R |
auf Bestellung 2268 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4456DY-T1-E3 | Vishay |
Trans MOSFET N-CH 40V 33A 8-Pin SOIC N T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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Si4456DY-T1-E3 | Vishay Siliconix |
Description: MOSFET N-CH 40V 33A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5670 pF @ 20 V |
auf Bestellung 1772 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4456DY-T1-E3 | Vishay |
Trans MOSFET N-CH 40V 33A 8-Pin SOIC N T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4456DY-T1-E3 | Vishay |
Trans MOSFET N-CH 40V 33A 8-Pin SOIC N T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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Si4456DY-T1-E3 | Vishay Semiconductors |
MOSFETs 40V 33A 7.8W 3.8mohm @ 10V |
auf Bestellung 298 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SI4456DY-T1-E3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 40V 33A 8-Pin SOIC N T/R
Trans MOSFET N-CH 40V 33A 8-Pin SOIC N T/R
auf Bestellung 2268 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 107+ | 1.68 EUR |
| 108+ | 1.59 EUR |
| 110+ | 1.51 EUR |
| 112+ | 1.43 EUR |
| 250+ | 1.34 EUR |
| 500+ | 1.27 EUR |
| 1000+ | 1.19 EUR |
| SI4456DY-T1-E3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 40V 33A 8-Pin SOIC N T/R
Trans MOSFET N-CH 40V 33A 8-Pin SOIC N T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 94+ | 1.9 EUR |
| Si4456DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 33A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5670 pF @ 20 V
Description: MOSFET N-CH 40V 33A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5670 pF @ 20 V
auf Bestellung 1772 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.75 EUR |
| 10+ | 2.46 EUR |
| SI4456DY-T1-E3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 40V 33A 8-Pin SOIC N T/R
Trans MOSFET N-CH 40V 33A 8-Pin SOIC N T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 55+ | 3.25 EUR |
| 68+ | 2.58 EUR |
| 100+ | 2.38 EUR |
| 200+ | 2.31 EUR |
| 500+ | 2.03 EUR |
| 1000+ | 1.87 EUR |
| 2000+ | 1.77 EUR |
| SI4456DY-T1-E3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 40V 33A 8-Pin SOIC N T/R
Trans MOSFET N-CH 40V 33A 8-Pin SOIC N T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 4.06 EUR |
| Si4456DY-T1-E3 |
|
Hersteller: Vishay Semiconductors
MOSFETs 40V 33A 7.8W 3.8mohm @ 10V
MOSFETs 40V 33A 7.8W 3.8mohm @ 10V
auf Bestellung 298 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.18 EUR |
| 10+ | 4.11 EUR |
| 100+ | 2.93 EUR |
| 500+ | 2.49 EUR |
| 2500+ | 2.37 EUR |