SI4461DY-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: P-CHANNEL 30-V (D-S) MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3W (Ta), 5.9W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta), 19A (Tc)
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Technische Details SI4461DY-T1-GE3 Vishay Siliconix
Description: P-CHANNEL 30-V (D-S) MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 3W (Ta), 5.9W (Tc), Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V, FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta), 19A (Tc).